Gate-Recessed AlGaN/GaN ISFET Urea Biosensor Fabricated by Photoelectrochemical Method

Engineering & Materials Science

• Ion sensitive field effect transistors 100%
• Urea 78%
• Biosensors 78%
• Transconductance 32%
• Carrier concentration 12%
• Heterojunctions 11%
• Glucose 10%
• Etching 9%
• Electrons 9%
• Ions 8%
• Oxidation 8%
• Membranes 7%

Physics & Astronomy

• ureas 78%
• bioinstrumentation 70%
• field effect transistors 50%
• ions 29%
• transconductance 26%
• sensitivity 14%
• recesses 10%
• glucose 9%
• etching 6%
• oxidation 5%
• membranes 5%
• performance 3%
• electrons 3%