Gate-recessed delta-doping enhancement-mode Al0.2Ga 0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant

K. F. Yarn, C. I. Liao, Yeong-Her Wang, Mau-phon Houng, M. C. Chure

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Gate-recessed delta-doping Al0.2Ga0.8As/In 0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (E-PHEMTs) using a newly developed citric buffer etchant are reported for the first time. The innovated etchant near room temperature (23 °C) possesses a high GaAs/Al0.2Ga0.8As etching selectivity (>250) applied to an etched stop surface with a root-mean-square (rms) roughness of only 0.197 nm. This device has the transconductance (Gm) of 315 mS/ mm and high linearity of 0.46 V-wide swing (drop of 10% peak Gm) in gate bias, corresponding to 143 mA/mm-wide IDS, even at a gate length of l μm. For microwave operation, this l μm-gate E-PHEMT shows the MSG (maximum stable gain) of 16.2 dB at 6.6 GHz and the ft (cutoff frequency) of 11.2 GHz. The measured minimum noise figure (NFmin), under VDS=3V and IDS=7.5mA, is 0.56 dB at 1 GHz with the associated gain of 10.86 dB. The NFmin is less than 1.5 dB in the frequency range from 1 to 4 GHz.

Original languageEnglish
Pages (from-to)550-554
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number4
DOIs
Publication statusPublished - 2005 Aug 1

Fingerprint

etchants
High electron mobility transistors
Buffers
buffers
Doping (additives)
augmentation
Noise figure
Cutoff frequency
Transconductance
high electron mobility transistors
Etching
Surface roughness
Microwaves
transconductance
linearity
roughness
cut-off
selectivity
frequency ranges
etching

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Gate-recessed delta-doping enhancement-mode Al0.2Ga 0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant",
abstract = "Gate-recessed delta-doping Al0.2Ga0.8As/In 0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (E-PHEMTs) using a newly developed citric buffer etchant are reported for the first time. The innovated etchant near room temperature (23 °C) possesses a high GaAs/Al0.2Ga0.8As etching selectivity (>250) applied to an etched stop surface with a root-mean-square (rms) roughness of only 0.197 nm. This device has the transconductance (Gm) of 315 mS/ mm and high linearity of 0.46 V-wide swing (drop of 10{\%} peak Gm) in gate bias, corresponding to 143 mA/mm-wide IDS, even at a gate length of l μm. For microwave operation, this l μm-gate E-PHEMT shows the MSG (maximum stable gain) of 16.2 dB at 6.6 GHz and the ft (cutoff frequency) of 11.2 GHz. The measured minimum noise figure (NFmin), under VDS=3V and IDS=7.5mA, is 0.56 dB at 1 GHz with the associated gain of 10.86 dB. The NFmin is less than 1.5 dB in the frequency range from 1 to 4 GHz.",
author = "Yarn, {K. F.} and Liao, {C. I.} and Yeong-Her Wang and Mau-phon Houng and Chure, {M. C.}",
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Gate-recessed delta-doping enhancement-mode Al0.2Ga 0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant. / Yarn, K. F.; Liao, C. I.; Wang, Yeong-Her; Houng, Mau-phon; Chure, M. C.

In: Materials Science in Semiconductor Processing, Vol. 8, No. 4, 01.08.2005, p. 550-554.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Gate-recessed delta-doping enhancement-mode Al0.2Ga 0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant

AU - Yarn, K. F.

AU - Liao, C. I.

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

AU - Chure, M. C.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - Gate-recessed delta-doping Al0.2Ga0.8As/In 0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (E-PHEMTs) using a newly developed citric buffer etchant are reported for the first time. The innovated etchant near room temperature (23 °C) possesses a high GaAs/Al0.2Ga0.8As etching selectivity (>250) applied to an etched stop surface with a root-mean-square (rms) roughness of only 0.197 nm. This device has the transconductance (Gm) of 315 mS/ mm and high linearity of 0.46 V-wide swing (drop of 10% peak Gm) in gate bias, corresponding to 143 mA/mm-wide IDS, even at a gate length of l μm. For microwave operation, this l μm-gate E-PHEMT shows the MSG (maximum stable gain) of 16.2 dB at 6.6 GHz and the ft (cutoff frequency) of 11.2 GHz. The measured minimum noise figure (NFmin), under VDS=3V and IDS=7.5mA, is 0.56 dB at 1 GHz with the associated gain of 10.86 dB. The NFmin is less than 1.5 dB in the frequency range from 1 to 4 GHz.

AB - Gate-recessed delta-doping Al0.2Ga0.8As/In 0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (E-PHEMTs) using a newly developed citric buffer etchant are reported for the first time. The innovated etchant near room temperature (23 °C) possesses a high GaAs/Al0.2Ga0.8As etching selectivity (>250) applied to an etched stop surface with a root-mean-square (rms) roughness of only 0.197 nm. This device has the transconductance (Gm) of 315 mS/ mm and high linearity of 0.46 V-wide swing (drop of 10% peak Gm) in gate bias, corresponding to 143 mA/mm-wide IDS, even at a gate length of l μm. For microwave operation, this l μm-gate E-PHEMT shows the MSG (maximum stable gain) of 16.2 dB at 6.6 GHz and the ft (cutoff frequency) of 11.2 GHz. The measured minimum noise figure (NFmin), under VDS=3V and IDS=7.5mA, is 0.56 dB at 1 GHz with the associated gain of 10.86 dB. The NFmin is less than 1.5 dB in the frequency range from 1 to 4 GHz.

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