TY - GEN
T1 - Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT
AU - Liu, Han Yin
AU - Lee, Ching Sung
AU - Lin, Chih Wei
AU - Chiang, Meng Hsueh
AU - Hsu, Wei Chou
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F- doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously for the E-mode AlGaN/GaN HEMT. Recently, the E-mode AlGaN/GaN MOSHEMT is realized by integrating two of the above methods to obtain higher Ids and more positive Vt [6, 7]. This work proposes gate structure engineering by integrating three processes, including gate recess, fluorine doped barrier layer and in-situ chlorine doped Al2O3 gate dielectric layer to realize the E-mode AlGaN/GaN MOSHEMT. The present MOSHEMT shows higher output current density and more positive threshold voltage than the MOSHEMTs which use gate recess and fluorine doping techniques.
AB - Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F- doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously for the E-mode AlGaN/GaN HEMT. Recently, the E-mode AlGaN/GaN MOSHEMT is realized by integrating two of the above methods to obtain higher Ids and more positive Vt [6, 7]. This work proposes gate structure engineering by integrating three processes, including gate recess, fluorine doped barrier layer and in-situ chlorine doped Al2O3 gate dielectric layer to realize the E-mode AlGaN/GaN MOSHEMT. The present MOSHEMT shows higher output current density and more positive threshold voltage than the MOSHEMTs which use gate recess and fluorine doping techniques.
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U2 - 10.1109/DRC.2017.7999446
DO - 10.1109/DRC.2017.7999446
M3 - Conference contribution
AN - SCOPUS:85028072713
T3 - Device Research Conference - Conference Digest, DRC
BT - 75th Annual Device Research Conference, DRC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 75th Annual Device Research Conference, DRC 2017
Y2 - 25 June 2017 through 28 June 2017
ER -