Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

Han Yin Liu, Ching Sung Lee, Chih Wei Lin, Meng Hsueh Chiang, Wei Chou Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F- doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously for the E-mode AlGaN/GaN HEMT. Recently, the E-mode AlGaN/GaN MOSHEMT is realized by integrating two of the above methods to obtain higher Ids and more positive Vt [6, 7]. This work proposes gate structure engineering by integrating three processes, including gate recess, fluorine doped barrier layer and in-situ chlorine doped Al2O3 gate dielectric layer to realize the E-mode AlGaN/GaN MOSHEMT. The present MOSHEMT shows higher output current density and more positive threshold voltage than the MOSHEMTs which use gate recess and fluorine doping techniques.

Original languageEnglish
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
Publication statusPublished - 2017 Aug 1
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: 2017 Jun 252017 Jun 28

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other75th Annual Device Research Conference, DRC 2017
CountryUnited States
CitySouth Bend

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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