Gate-voltage-dependent Landau levels in AA-stacked bilayer graphene

Sing Jyun Tsai, Yu Huang Chiu, Yen Hung Ho, Ming Fa Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effects of gate voltage Vg on the Landau levels (LLs) of the AA-stacked bilayer graphene are investigated by the Peierls tight-binding model. A uniform perpendicular magnetic field ( B0) produces two groups of LLs. Vg can raise the threshold LL energies, increase the quantum numbers of the LLs nearest to the chemical potential, and modify the LL spacing. An energy gap is induced by B0, and it has an oscillatory dependence on Vg and B0. There exist semiconductor- semimetal transitions at certain critical gate voltages. Some carriers are transferred between similar sublattices on the two different layers. On the other hand, the main features of the Landau wave functions remain unchanged.

Original languageEnglish
Pages (from-to)104-110
Number of pages7
JournalChemical Physics Letters
Volume550
DOIs
Publication statusPublished - 2012 Oct 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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