Ge nanowire transistors with high-quality interfaces by atomic-scale thermal annealing

Jianshi Tang, Chiu Yen Wang, Lih Juann Chen, Kang L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-performance Ge nanowire transistors with single-crystalline germanides as Schottky source/drain contacts were fabricated via the solid-state reaction between a single-crystalline Ge nanowire and two Ni contact pads using rapid thermal annealing. The formed high-quality germanides show atomically clean epitaxial interface with the Ge nanowire. The effect of oxide confinement was also studied to control the growth of nickel germanides, and further to passivate the Ge nanowire surface. In addition, a room-temperature ferromagnetic germanide, Mn5Ge3, was formed in the fabrication of Mn5Ge3/Ge/Mn5Ge3 nanowire transistors using a similar approach. Temperature-dependent I-V measurements were performed to extract a Schottky barrier height of 0.25 eV for Mn 5Ge3 conducting to p-Ge, which suggested promising spin injection from Mn5Ge3 into Ge nanowires. Our results open up exciting opportunities to fabricate high-performance Ge nanowire transistors and further explore spintronics applications in Ge nanowire heterostructures with high-quality epitaxial interfaces.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
Publication statusPublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 2012 Aug 202012 Aug 23

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/TerritoryUnited Kingdom
CityBirmingham
Period12-08-2012-08-23

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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