Geometry effects on the novel bipolar-unipolar transition negative differential resistance (BUNDR) transistor are investigated. Comparisons of d.c. characteristics are made among rectangular, circle and interdigitated structures fabricated on the same MBE-grown wafer. By using suitable geometry, the cut-in voltage can be reduced and the current can also be greatly enhanced for power consideration.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry