Geometry effects on the GaAs bipolar-unipolar negative differential resistance transistor

K. F. Yarn, Y. H. Wang, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Geometry effects on the novel bipolar-unipolar transition negative differential resistance (BUNDR) transistor are investigated. Comparisons of d.c. characteristics are made among rectangular, circle and interdigitated structures fabricated on the same MBE-grown wafer. By using suitable geometry, the cut-in voltage can be reduced and the current can also be greatly enhanced for power consideration.

Original languageEnglish
Pages (from-to)755-760
Number of pages6
JournalSolid State Electronics
Volume32
Issue number9
DOIs
Publication statusPublished - 1989 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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