Giant positive magnetoresistance in ferromagnetic manganites/silicon nanotips diode

Cheong-Wei Chong; Daniel Hsu; Wei Chao Chen; Chien Cheng Li; Jauyn Grace Lin; Li Chyong Chen; Kuei Hsien Chen; Yang Fang Chen

doi:10.1021/jp308823r

Giant positive magnetoresistance in ferromagnetic manganites/silicon nanotips diode

Cheong-Wei Chong
, Daniel Hsu
, Wei Chao Chen
, Chien Cheng Li
, Jauyn Grace Lin
, Li Chyong Chen
, Kuei Hsien Chen
, Yang Fang Chen

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The current-voltage relations and magnetotransport properties of La _0.7Sr _0.3MnO ₃/Si-nanotips and La _0.7Sr _0.3MnO ₃/Si-film junctions are studied, revealing that their transport properties are dominated by various mechanisms depending on temperature and bias voltage. A giant positive magnetoresistance (PMR) of ∼200% is observed at 40 K in La _0.7Sr _0.3MnO ₃/Si-nanotips junction. The temperature dependence of resistance in the presence of magnetic field suggests the origin of giant PMR to be the strong electron-electron interaction and electron-magnon scattering. Interestingly, such behavior is not observed in regular La _0.7Sr _0.3MnO ₃/Si-film junction, implying that the coupling between spin and charge could be greatly enhanced at the interface of La _0.7Sr _0.3MnO ₃ and Si nanotips.

Original language	English
Pages (from-to)	21132-21137
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	39
DOIs	https://doi.org/10.1021/jp308823r
Publication status	Published - 2012 Oct 4

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

Access to Document

10.1021/jp308823r

Cite this

@article{a263f6c251464b338c4960ae13ec377b,

title = "Giant positive magnetoresistance in ferromagnetic manganites/silicon nanotips diode",

abstract = "The current-voltage relations and magnetotransport properties of La 0.7Sr 0.3MnO 3/Si-nanotips and La 0.7Sr 0.3MnO 3/Si-film junctions are studied, revealing that their transport properties are dominated by various mechanisms depending on temperature and bias voltage. A giant positive magnetoresistance (PMR) of ∼200\% is observed at 40 K in La 0.7Sr 0.3MnO 3/Si-nanotips junction. The temperature dependence of resistance in the presence of magnetic field suggests the origin of giant PMR to be the strong electron-electron interaction and electron-magnon scattering. Interestingly, such behavior is not observed in regular La 0.7Sr 0.3MnO 3/Si-film junction, implying that the coupling between spin and charge could be greatly enhanced at the interface of La 0.7Sr 0.3MnO 3 and Si nanotips.",

author = "Cheong-Wei Chong and Daniel Hsu and Chen, \{Wei Chao\} and Li, \{Chien Cheng\} and Lin, \{Jauyn Grace\} and Chen, \{Li Chyong\} and Chen, \{Kuei Hsien\} and Chen, \{Yang Fang\}",

year = "2012",

month = oct,

day = "4",

doi = "10.1021/jp308823r",

language = "English",

volume = "116",

pages = "21132--21137",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "39",

}

TY - JOUR

T1 - Giant positive magnetoresistance in ferromagnetic manganites/silicon nanotips diode

AU - Chong, Cheong-Wei

AU - Hsu, Daniel

AU - Chen, Wei Chao

AU - Li, Chien Cheng

AU - Lin, Jauyn Grace

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

AU - Chen, Yang Fang

PY - 2012/10/4

Y1 - 2012/10/4

N2 - The current-voltage relations and magnetotransport properties of La 0.7Sr 0.3MnO 3/Si-nanotips and La 0.7Sr 0.3MnO 3/Si-film junctions are studied, revealing that their transport properties are dominated by various mechanisms depending on temperature and bias voltage. A giant positive magnetoresistance (PMR) of ∼200% is observed at 40 K in La 0.7Sr 0.3MnO 3/Si-nanotips junction. The temperature dependence of resistance in the presence of magnetic field suggests the origin of giant PMR to be the strong electron-electron interaction and electron-magnon scattering. Interestingly, such behavior is not observed in regular La 0.7Sr 0.3MnO 3/Si-film junction, implying that the coupling between spin and charge could be greatly enhanced at the interface of La 0.7Sr 0.3MnO 3 and Si nanotips.

AB - The current-voltage relations and magnetotransport properties of La 0.7Sr 0.3MnO 3/Si-nanotips and La 0.7Sr 0.3MnO 3/Si-film junctions are studied, revealing that their transport properties are dominated by various mechanisms depending on temperature and bias voltage. A giant positive magnetoresistance (PMR) of ∼200% is observed at 40 K in La 0.7Sr 0.3MnO 3/Si-nanotips junction. The temperature dependence of resistance in the presence of magnetic field suggests the origin of giant PMR to be the strong electron-electron interaction and electron-magnon scattering. Interestingly, such behavior is not observed in regular La 0.7Sr 0.3MnO 3/Si-film junction, implying that the coupling between spin and charge could be greatly enhanced at the interface of La 0.7Sr 0.3MnO 3 and Si nanotips.

UR - https://www.scopus.com/pages/publications/84867179874

UR - https://www.scopus.com/pages/publications/84867179874#tab=citedBy

U2 - 10.1021/jp308823r

DO - 10.1021/jp308823r

M3 - Article

AN - SCOPUS:84867179874

SN - 1932-7447

VL - 116

SP - 21132

EP - 21137

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 39

ER -

Giant positive magnetoresistance in ferromagnetic manganites/silicon nanotips diode

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this