Giant room temperature electric-field-assisted magnetoresistance in La 0.7Sr0.3MnO3/n-Si nanotip heterojunctions

Cheong-Wei Chong, Daniel Hsu, Wei Chao Chen, Chien Cheng Li, Yi Fan Huang, Hsieh Cheng Han, Jauyn Grace Lin, Li Chyong Chen, Kuei Hsien Chen, Yang Fang Chen

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3 Citations (Scopus)

Abstract

An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La0.7Sr 0.3MnO3 (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 μA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.

Original languageEnglish
Article number125701
JournalNanotechnology
Volume22
Issue number12
DOIs
Publication statusPublished - 2011 Mar 25

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Chong, C-W., Hsu, D., Chen, W. C., Li, C. C., Huang, Y. F., Han, H. C., Lin, J. G., Chen, L. C., Chen, K. H., & Chen, Y. F. (2011). Giant room temperature electric-field-assisted magnetoresistance in La 0.7Sr0.3MnO3/n-Si nanotip heterojunctions. Nanotechnology, 22(12), [125701]. https://doi.org/10.1088/0957-4484/22/12/125701