Giant room temperature electric-field-assisted magnetoresistance in La 0.7Sr0.3MnO3/n-Si nanotip heterojunctions

Cheong Wei Chong; Daniel Hsu; Wei Chao Chen; Chien Cheng Li; Yi Fan Huang; Hsieh Cheng Han; Jauyn Grace Lin; Li Chyong Chen; Kuei Hsien Chen; Yang Fang Chen

doi:10.1088/0957-4484/22/12/125701

Giant room temperature electric-field-assisted magnetoresistance in La _0.7Sr_0.3MnO₃/n-Si nanotip heterojunctions

Cheong Wei Chong, Daniel Hsu, Wei Chao Chen, Chien Cheng Li, Yi Fan Huang, Hsieh Cheng Han, Jauyn Grace Lin, Li Chyong Chen, Kuei Hsien Chen, Yang Fang Chen

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La_0.7Sr _0.3MnO₃ (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 μA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.

Original language	English
Article number	125701
Journal	Nanotechnology
Volume	22
Issue number	12
DOIs	https://doi.org/10.1088/0957-4484/22/12/125701
Publication status	Published - 2011 Mar 25

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/22/12/125701

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title = "Giant room temperature electric-field-assisted magnetoresistance in La 0.7Sr0.3MnO3/n-Si nanotip heterojunctions",

abstract = "An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La0.7Sr 0.3MnO3 (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 μA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.",

author = "Chong, {Cheong Wei} and Daniel Hsu and Chen, {Wei Chao} and Li, {Chien Cheng} and Huang, {Yi Fan} and Han, {Hsieh Cheng} and Lin, {Jauyn Grace} and Chen, {Li Chyong} and Chen, {Kuei Hsien} and Chen, {Yang Fang}",

year = "2011",

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doi = "10.1088/0957-4484/22/12/125701",

language = "English",

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TY - JOUR

T1 - Giant room temperature electric-field-assisted magnetoresistance in La 0.7Sr0.3MnO3/n-Si nanotip heterojunctions

AU - Chong, Cheong Wei

AU - Hsu, Daniel

AU - Chen, Wei Chao

AU - Li, Chien Cheng

AU - Huang, Yi Fan

AU - Han, Hsieh Cheng

AU - Lin, Jauyn Grace

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

AU - Chen, Yang Fang

PY - 2011/3/25

Y1 - 2011/3/25

N2 - An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La0.7Sr 0.3MnO3 (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 μA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.

AB - An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La0.7Sr 0.3MnO3 (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 μA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.

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JO - Nanotechnology

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Giant room temperature electric-field-assisted magnetoresistance in La _0.7Sr_0.3MnO₃/n-Si nanotip heterojunctions

Abstract

All Science Journal Classification (ASJC) codes

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