Global parameter extraction for a multi-gate MOSFETs compact model

Shijing Yao, Tanvir H. Morshed, Darsen Lu, Sriramkumar Venugopalan, Weize Xiong, C. R. Cleavelin, Ali M. Niknejad, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.

Original languageEnglish
Title of host publication2010 International Conference on Microelectronic Test Structures, 23rd IEEE ICMTS Conference Proceedings
Pages194-197
Number of pages4
DOIs
Publication statusPublished - 2010 Jun 29
Event2010 International Conference on Microelectronic Test Structures, ICMTS 2010 - Hiroshima, Japan
Duration: 2010 Mar 222010 Mar 25

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Other

Other2010 International Conference on Microelectronic Test Structures, ICMTS 2010
CountryJapan
CityHiroshima
Period10-03-2210-03-25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Global parameter extraction for a multi-gate MOSFETs compact model'. Together they form a unique fingerprint.

Cite this