TY - GEN
T1 - Gradual RESET modulation by intentionally oxidized titanium oxide for multilayer-hBN RRAM
AU - Chen, Po An
AU - Hsu, Wei Chou
AU - Chiang, Meng Hsueh
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported in part by the Ministry of Science and Technology of Taiwan. The authors would like to thank the Taiwan Semiconductor Research Institute for technical support.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - Hexagonal boron nitride (hBN) has recently become a promising material for being utilized as switching layer while resistive random-access memory (RRAM) continues to emerge. In this work, the insertion of intentionally oxidized titanium oxide between multilayer hBN and top electrode modulates the RESET characteristic into gradual RESET, which can promote the reliability for multilayer-hBN RRAM. The consistency of high resistance state (HRS) can be improved by preventing the RRAM devices from abrupt RESET, and then the good uniformity of SET and RESET voltages can be obtained. The effective modulation can be attributed to the multiple thin conductive filaments, and the inhibition for Ti penetration. Significant reliability improvement for multilayer-hBN RRAM is achieved through the demonstrated simple process control.
AB - Hexagonal boron nitride (hBN) has recently become a promising material for being utilized as switching layer while resistive random-access memory (RRAM) continues to emerge. In this work, the insertion of intentionally oxidized titanium oxide between multilayer hBN and top electrode modulates the RESET characteristic into gradual RESET, which can promote the reliability for multilayer-hBN RRAM. The consistency of high resistance state (HRS) can be improved by preventing the RRAM devices from abrupt RESET, and then the good uniformity of SET and RESET voltages can be obtained. The effective modulation can be attributed to the multiple thin conductive filaments, and the inhibition for Ti penetration. Significant reliability improvement for multilayer-hBN RRAM is achieved through the demonstrated simple process control.
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U2 - 10.1109/NMDC47361.2019.9084024
DO - 10.1109/NMDC47361.2019.9084024
M3 - Conference contribution
AN - SCOPUS:85086244477
T3 - 2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019
BT - 2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th IEEE Nanotechnology Materials and Devices Conference, NMDC 2019
Y2 - 27 October 2019 through 30 October 2019
ER -