Gradual RESET modulation by intentionally oxidized titanium oxide for multilayer-hBN RRAM

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hexagonal boron nitride (hBN) has recently become a promising material for being utilized as switching layer while resistive random-access memory (RRAM) continues to emerge. In this work, the insertion of intentionally oxidized titanium oxide between multilayer hBN and top electrode modulates the RESET characteristic into gradual RESET, which can promote the reliability for multilayer-hBN RRAM. The consistency of high resistance state (HRS) can be improved by preventing the RRAM devices from abrupt RESET, and then the good uniformity of SET and RESET voltages can be obtained. The effective modulation can be attributed to the multiple thin conductive filaments, and the inhibition for Ti penetration. Significant reliability improvement for multilayer-hBN RRAM is achieved through the demonstrated simple process control.

Original languageEnglish
Title of host publication2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728126371
DOIs
Publication statusPublished - 2019 Oct
Event14th IEEE Nanotechnology Materials and Devices Conference, NMDC 2019 - Stockholm, Sweden
Duration: 2019 Oct 272019 Oct 30

Publication series

Name2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019

Conference

Conference14th IEEE Nanotechnology Materials and Devices Conference, NMDC 2019
CountrySweden
CityStockholm
Period19-10-2719-10-30

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Polymers and Plastics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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