TY - GEN
T1 - Graphene-based Embedded-Oxide-Trap Memory (gEOTM) for flexible electronics application
AU - Kim, Sung Min
AU - Lee, Sejoon
AU - Song, Emil B.
AU - Seo, Sunae
AU - Seo, David H.
AU - Wang, Kang L.
PY - 2012
Y1 - 2012
N2 - A The non-volatile gEOTMs are fabricated using a single-layer graphene (SLG) channel with an Al 2O 3 gate oxide layer, in which an ion-bombarded AlO x layer is intentionally formed by oxygen ion bombardment (OIB) to create the charge trap sites. The whole processes are carried out at temperature below 120°C to exploit gEOTM's compatibility to the flexible substrates. The devices shows a large memory window (> 11.0 V), attributing to the effective electron-injection into the trap sites in AlO x. The results suggest that the gEOTM has potential applications for the high-density-memory devices and modules in flexible electronics.
AB - A The non-volatile gEOTMs are fabricated using a single-layer graphene (SLG) channel with an Al 2O 3 gate oxide layer, in which an ion-bombarded AlO x layer is intentionally formed by oxygen ion bombardment (OIB) to create the charge trap sites. The whole processes are carried out at temperature below 120°C to exploit gEOTM's compatibility to the flexible substrates. The devices shows a large memory window (> 11.0 V), attributing to the effective electron-injection into the trap sites in AlO x. The results suggest that the gEOTM has potential applications for the high-density-memory devices and modules in flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=84861215584&partnerID=8YFLogxK
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U2 - 10.1109/ULIS.2012.6193346
DO - 10.1109/ULIS.2012.6193346
M3 - Conference contribution
AN - SCOPUS:84861215584
SN - 9781467301916
T3 - 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
SP - 17
EP - 20
BT - 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
T2 - 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
Y2 - 6 March 2012 through 7 March 2012
ER -