Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3

Xiao-Ding Qi, Joonghoe Dho, Rumen Tomov, Mark G. Blamire, Judith L. MacManus-Driscoll

Research output: Contribution to journalArticlepeer-review

902 Citations (Scopus)

Abstract

Transport properties of aliovalent-ion-doped BiFeO3 (BFO) thin films have been studied in order to identify the cause of high leakage currents. Doping of 2 at. % Ti4+ ions increased the dc resistivity by more than three orders of magnitude. In contrast, doping of 2+ ions such as Ni2+ reduced the dc resistivity by two orders of magnitude. Current-voltage (I-V) characteristics indicated that the main conduction mechanism for pure and Ni2+ doped BFO was space charge limited, which was associated with the free-carriers trapped by the oxygen vacancies, whereas in the Ti4+ doped BFO, field-assisted ionic conduction was dominant.

Original languageEnglish
Article number062903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number6
DOIs
Publication statusPublished - 2005 Feb 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3'. Together they form a unique fingerprint.

Cite this