TY - JOUR
T1 - Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3
AU - Qi, Xiaoding
AU - Dho, Joonghoe
AU - Tomov, Rumen
AU - Blamire, Mark G.
AU - MacManus-Driscoll, Judith L.
PY - 2005/2/7
Y1 - 2005/2/7
N2 - Transport properties of aliovalent-ion-doped BiFeO3 (BFO) thin films have been studied in order to identify the cause of high leakage currents. Doping of 2 at. % Ti4+ ions increased the dc resistivity by more than three orders of magnitude. In contrast, doping of 2+ ions such as Ni2+ reduced the dc resistivity by two orders of magnitude. Current-voltage (I-V) characteristics indicated that the main conduction mechanism for pure and Ni2+ doped BFO was space charge limited, which was associated with the free-carriers trapped by the oxygen vacancies, whereas in the Ti4+ doped BFO, field-assisted ionic conduction was dominant.
AB - Transport properties of aliovalent-ion-doped BiFeO3 (BFO) thin films have been studied in order to identify the cause of high leakage currents. Doping of 2 at. % Ti4+ ions increased the dc resistivity by more than three orders of magnitude. In contrast, doping of 2+ ions such as Ni2+ reduced the dc resistivity by two orders of magnitude. Current-voltage (I-V) characteristics indicated that the main conduction mechanism for pure and Ni2+ doped BFO was space charge limited, which was associated with the free-carriers trapped by the oxygen vacancies, whereas in the Ti4+ doped BFO, field-assisted ionic conduction was dominant.
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U2 - 10.1063/1.1862336
DO - 10.1063/1.1862336
M3 - Article
AN - SCOPUS:18744378644
SN - 0003-6951
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 6
M1 - 062903
ER -