Growing Al2O3 by ultrasonic spray pyrolysis for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetectors

Han Yin Liu, Wei-Chou Hsu, Bo Yi Chou, Yi Hsuan Wang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu, Meng-Hsueh Chiang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper proposed Al2O3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) applications. The composition of USP-grown Al2O3 was confirmed by X-ray photoelectron spectroscopy. The refractive index and transmittance characteristics of USP-grown Al2O3 were also characterized. The Al2O3/AlGaN/GaN MIS-UV-PD performances with different Al2O3 thickness (30, 20, and 15 nm) were investigated. The responsivity was 1.3 \times 10^{-3}/7.5 \times 10^{-3}/0.83 A/W, UV-to-visible rejection ratio was 2.34 \times 10^{3}/1.37 \times 10^{4}/3.18 \times 10^{5} , and the detectivity was 2.78 \times 10^{8}/1.26 \times 10^{9}/1.17 \times 10^{11} cmHz ^{0.5} W ^{-1} for the MIS-UV-PD with 30-/20-/15-nm-thick Al2O3. It was found that the performances of MIS-UV-PD with 15-nm Al2O3 as the insulator layer are much better than the MIS-UV-PD with 20-and 30-nm Al2O3.

Original languageEnglish
Article number6965486
Pages (from-to)4062-4069
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
DOIs
Publication statusPublished - 2014 Dec 1

Fingerprint

Spray pyrolysis
Photodetectors
Ultrasonics
Metals
Semiconductor materials
Refractive index
X ray photoelectron spectroscopy
aluminum gallium nitride
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liu, Han Yin ; Hsu, Wei-Chou ; Chou, Bo Yi ; Wang, Yi Hsuan ; Sun, Wen Ching ; Wei, Sung Yen ; Yu, Sheng Min ; Chiang, Meng-Hsueh. / Growing Al2O3 by ultrasonic spray pyrolysis for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetectors. In: IEEE Transactions on Electron Devices. 2014 ; Vol. 61, No. 12. pp. 4062-4069.
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abstract = "This paper proposed Al2O3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) applications. The composition of USP-grown Al2O3 was confirmed by X-ray photoelectron spectroscopy. The refractive index and transmittance characteristics of USP-grown Al2O3 were also characterized. The Al2O3/AlGaN/GaN MIS-UV-PD performances with different Al2O3 thickness (30, 20, and 15 nm) were investigated. The responsivity was 1.3 \times 10^{-3}/7.5 \times 10^{-3}/0.83 A/W, UV-to-visible rejection ratio was 2.34 \times 10^{3}/1.37 \times 10^{4}/3.18 \times 10^{5} , and the detectivity was 2.78 \times 10^{8}/1.26 \times 10^{9}/1.17 \times 10^{11} cmHz ^{0.5} W ^{-1} for the MIS-UV-PD with 30-/20-/15-nm-thick Al2O3. It was found that the performances of MIS-UV-PD with 15-nm Al2O3 as the insulator layer are much better than the MIS-UV-PD with 20-and 30-nm Al2O3.",
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Growing Al2O3 by ultrasonic spray pyrolysis for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetectors. / Liu, Han Yin; Hsu, Wei-Chou; Chou, Bo Yi; Wang, Yi Hsuan; Sun, Wen Ching; Wei, Sung Yen; Yu, Sheng Min; Chiang, Meng-Hsueh.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 12, 6965486, 01.12.2014, p. 4062-4069.

Research output: Contribution to journalArticle

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T1 - Growing Al2O3 by ultrasonic spray pyrolysis for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetectors

AU - Liu, Han Yin

AU - Hsu, Wei-Chou

AU - Chou, Bo Yi

AU - Wang, Yi Hsuan

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

AU - Chiang, Meng-Hsueh

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N2 - This paper proposed Al2O3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) applications. The composition of USP-grown Al2O3 was confirmed by X-ray photoelectron spectroscopy. The refractive index and transmittance characteristics of USP-grown Al2O3 were also characterized. The Al2O3/AlGaN/GaN MIS-UV-PD performances with different Al2O3 thickness (30, 20, and 15 nm) were investigated. The responsivity was 1.3 \times 10^{-3}/7.5 \times 10^{-3}/0.83 A/W, UV-to-visible rejection ratio was 2.34 \times 10^{3}/1.37 \times 10^{4}/3.18 \times 10^{5} , and the detectivity was 2.78 \times 10^{8}/1.26 \times 10^{9}/1.17 \times 10^{11} cmHz ^{0.5} W ^{-1} for the MIS-UV-PD with 30-/20-/15-nm-thick Al2O3. It was found that the performances of MIS-UV-PD with 15-nm Al2O3 as the insulator layer are much better than the MIS-UV-PD with 20-and 30-nm Al2O3.

AB - This paper proposed Al2O3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) applications. The composition of USP-grown Al2O3 was confirmed by X-ray photoelectron spectroscopy. The refractive index and transmittance characteristics of USP-grown Al2O3 were also characterized. The Al2O3/AlGaN/GaN MIS-UV-PD performances with different Al2O3 thickness (30, 20, and 15 nm) were investigated. The responsivity was 1.3 \times 10^{-3}/7.5 \times 10^{-3}/0.83 A/W, UV-to-visible rejection ratio was 2.34 \times 10^{3}/1.37 \times 10^{4}/3.18 \times 10^{5} , and the detectivity was 2.78 \times 10^{8}/1.26 \times 10^{9}/1.17 \times 10^{11} cmHz ^{0.5} W ^{-1} for the MIS-UV-PD with 30-/20-/15-nm-thick Al2O3. It was found that the performances of MIS-UV-PD with 15-nm Al2O3 as the insulator layer are much better than the MIS-UV-PD with 20-and 30-nm Al2O3.

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