Abstract
This paper proposed Al2O3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) applications. The composition of USP-grown Al2O3 was confirmed by X-ray photoelectron spectroscopy. The refractive index and transmittance characteristics of USP-grown Al2O3 were also characterized. The Al2O3/AlGaN/GaN MIS-UV-PD performances with different Al2O3 thickness (30, 20, and 15 nm) were investigated. The responsivity was 1.3 \times 10^{-3}/7.5 \times 10^{-3}/0.83 A/W, UV-to-visible rejection ratio was 2.34 \times 10^{3}/1.37 \times 10^{4}/3.18 \times 10^{5} , and the detectivity was 2.78 \times 10^{8}/1.26 \times 10^{9}/1.17 \times 10^{11} cmHz ^{0.5} W ^{-1} for the MIS-UV-PD with 30-/20-/15-nm-thick Al2O3. It was found that the performances of MIS-UV-PD with 15-nm Al2O3 as the insulator layer are much better than the MIS-UV-PD with 20-and 30-nm Al2O3.
Original language | English |
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Article number | 6965486 |
Pages (from-to) | 4062-4069 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 61 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2014 Dec 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering