Growing Al2O3 by ultrasonic spray pyrolysis for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetectors

Han Yin Liu, Wei Chou Hsu, Bo Yi Chou, Yi Hsuan Wang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu, Meng Hsueh Chiang

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7 Citations (Scopus)


This paper proposed Al2O3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) applications. The composition of USP-grown Al2O3 was confirmed by X-ray photoelectron spectroscopy. The refractive index and transmittance characteristics of USP-grown Al2O3 were also characterized. The Al2O3/AlGaN/GaN MIS-UV-PD performances with different Al2O3 thickness (30, 20, and 15 nm) were investigated. The responsivity was 1.3 \times 10^{-3}/7.5 \times 10^{-3}/0.83 A/W, UV-to-visible rejection ratio was 2.34 \times 10^{3}/1.37 \times 10^{4}/3.18 \times 10^{5} , and the detectivity was 2.78 \times 10^{8}/1.26 \times 10^{9}/1.17 \times 10^{11} cmHz ^{0.5} W ^{-1} for the MIS-UV-PD with 30-/20-/15-nm-thick Al2O3. It was found that the performances of MIS-UV-PD with 15-nm Al2O3 as the insulator layer are much better than the MIS-UV-PD with 20-and 30-nm Al2O3.

Original languageEnglish
Article number6965486
Pages (from-to)4062-4069
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number12
Publication statusPublished - 2014 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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