Growth and characterization of a-plane (1120) GaN films on (010) LiGaO 2 substrate by chemical vapor deposition

Mitch M.C. Chou; Chenlong Chen; Chunyu Chang; Chu An Li

doi:10.1016/j.jcrysgro.2012.10.019

Growth and characterization of a-plane (1120) GaN films on (010) LiGaO ₂ substrate by chemical vapor deposition

Mitch M.C. Chou
, Chenlong Chen
, Chunyu Chang
, Chu An Li

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Nonpolar (1120) GaN films were successfully grown on closely lattice-matched (010) LiGaO₂ (LGO) substrates by chemical vapor deposition (CVD) method. The dependence of growth characteristics on the growth temperatures was investigated. The surface morphologies of GaN films were characterized by scanning electron microscopy. Structural properties of the GaN epilayers were investigated by X-ray diffraction and transmission electron microscopy. Cross-section transmission electron microscopy results showed direct evidence of the in-plane structural relationship between the GaN epilayer and (010) LGO substrate. Low temperature photoluminescence was dominated by neutral donor bound excitons emission at 3.472 eV and the defect-related yellow emission was negligible.

Original language	English
Pages (from-to)	113-117
Number of pages	5
Journal	Journal of Crystal Growth
Volume	363
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.10.019
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2012.10.019

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title = "Growth and characterization of a-plane (1120) GaN films on (010) LiGaO 2 substrate by chemical vapor deposition",

abstract = "Nonpolar (1120) GaN films were successfully grown on closely lattice-matched (010) LiGaO2 (LGO) substrates by chemical vapor deposition (CVD) method. The dependence of growth characteristics on the growth temperatures was investigated. The surface morphologies of GaN films were characterized by scanning electron microscopy. Structural properties of the GaN epilayers were investigated by X-ray diffraction and transmission electron microscopy. Cross-section transmission electron microscopy results showed direct evidence of the in-plane structural relationship between the GaN epilayer and (010) LGO substrate. Low temperature photoluminescence was dominated by neutral donor bound excitons emission at 3.472 eV and the defect-related yellow emission was negligible.",

author = "Chou, \{Mitch M.C.\} and Chenlong Chen and Chunyu Chang and Li, \{Chu An\}",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.10.019",

language = "English",

volume = "363",

pages = "113--117",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Growth and characterization of a-plane (1120) GaN films on (010) LiGaO 2 substrate by chemical vapor deposition

AU - Chou, Mitch M.C.

AU - Chen, Chenlong

AU - Chang, Chunyu

AU - Li, Chu An

PY - 2013

Y1 - 2013

N2 - Nonpolar (1120) GaN films were successfully grown on closely lattice-matched (010) LiGaO2 (LGO) substrates by chemical vapor deposition (CVD) method. The dependence of growth characteristics on the growth temperatures was investigated. The surface morphologies of GaN films were characterized by scanning electron microscopy. Structural properties of the GaN epilayers were investigated by X-ray diffraction and transmission electron microscopy. Cross-section transmission electron microscopy results showed direct evidence of the in-plane structural relationship between the GaN epilayer and (010) LGO substrate. Low temperature photoluminescence was dominated by neutral donor bound excitons emission at 3.472 eV and the defect-related yellow emission was negligible.

AB - Nonpolar (1120) GaN films were successfully grown on closely lattice-matched (010) LiGaO2 (LGO) substrates by chemical vapor deposition (CVD) method. The dependence of growth characteristics on the growth temperatures was investigated. The surface morphologies of GaN films were characterized by scanning electron microscopy. Structural properties of the GaN epilayers were investigated by X-ray diffraction and transmission electron microscopy. Cross-section transmission electron microscopy results showed direct evidence of the in-plane structural relationship between the GaN epilayer and (010) LGO substrate. Low temperature photoluminescence was dominated by neutral donor bound excitons emission at 3.472 eV and the defect-related yellow emission was negligible.

UR - https://www.scopus.com/pages/publications/84888377289

UR - https://www.scopus.com/pages/publications/84888377289#tab=citedBy

U2 - 10.1016/j.jcrysgro.2012.10.019

DO - 10.1016/j.jcrysgro.2012.10.019

M3 - Article

AN - SCOPUS:84888377289

SN - 0022-0248

VL - 363

SP - 113

EP - 117

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth and characterization of a-plane (1120) GaN films on (010) LiGaO ₂ substrate by chemical vapor deposition

Abstract

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