Growth and characterization of epitaxial ZnO nanowall networks using metal organic chemical vapor deposition

Chia Cheng Wu, Dong Sing Wuu, Tsai Ning Chen, Ting En Yu, Po Rung Lin, Ray Hua Horng, Steven Hsin-Yi Lai

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

ZnO nanowall networks with a honeycomblike pattern on GaN/sapphire substrates were deposited by metalorganic chemical vapor deposition (MOCVD) without using any metal catalysts. The effects of growth temperature and VI/II ratio on the surface morphology and optical properties of ZnO nanowall networks were investigated by scanning electron microscopy (SEM) and photoluminescence (PL) analysis. The SEM image obtained shows a prominent nanowall-network structure when the growth temperature is higher than 550°C. The wall width and network size of ZnO nanowall-network structures grown by MOCVD were found to change depending on DEZn flow rate. The surface morphology of ZnO structures was observed at different time intervals from 10 to 40 min to investigate the formation mechanism of ZnO nanowall networks. The roomtemperature PL measurement of ZnO nanostructures grown on GaN/sapphire substrates shows high-intensity ultraviolet peaks at 385nm without any "green peak". The PL spectrum suggests that the quantum confinement effects are caused by the nanostructure of ZnO.

Original languageEnglish
Pages (from-to)746-750
Number of pages5
JournalJapanese Journal of Applied Physics
Volume47
Issue number1 PART 2
DOIs
Publication statusPublished - 2008 Jan 22

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Growth and characterization of epitaxial ZnO nanowall networks using metal organic chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this