Growth and characterization of Ga 2O 3 on sapphire substrates for UV sensor applications

Dong Sing Wuu, Sin Liang Ou, Ray Hua Horng, Parvaneh Ravadgar, Tzu Yu Wang, Hsin-Ying Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)


The β-Ga 2O 3 films were grown on (0001) sapphire at 500°C by metal organic chemical vapor deposition. In the analysis of crystal structure, we found that the (-201) oriented single crystal β-Ga 2O 3 epilayer can be obtained under low chamber pressure of 15 torr. Moreover, a metal-semiconductor-metal solar-blind deep ultraviolet photodetector was fabricated with the β-Ga 2O 3 epilayer. As the bias voltage is 5 V, the photodetector exhibits a relatively low dark current about 0.2 pA, which induced by the highly resistive nature of the β-Ga 2O 3 thin films. From the responsivity result, it can be observed that photodetector shows a maximum responsivity at 260 nm, revealing the β-Ga 2O 3 photodetector was really solar-blind. The responsivity of the photodetector was as high as 20.1 A/W with an applied bias of 5 V and an incident light wavelength of 260 nm. The improved performance is attributed to the high quality of β-Ga 2O 3 epilayer.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices III
Publication statusPublished - 2012 Mar 23
EventOxide-Based Materials and Devices III - San Francisco, CA, United States
Duration: 2012 Jan 222012 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOxide-Based Materials and Devices III
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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