Growth and characterization of GaN-based structures on SiCOI-engineered substrates

Y. Dikme, P. Van Gemmern, Y. C. Lin, A. Szymakowski, H. Kalisch, B. Faure, C. Richtarch, H. Larhèche, P. Bove, F. Letertre, J. F. Woitok, K. Efthimiadis, R. H. Jansen, M. Heuken

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4 Citations (Scopus)

Abstract

Silicon carbide (SiC) still shows the best properties as substrate for the growth of GaN and its alloys but suffers from a very high price. An innovative alternative for this substrate are SiC/SiO2/Si (SiCOI) substrates, combining SiC and Si (silicon) substrate advantages thanks to the Smart Cut™ technology. These substrates consist of thin SiC layers (∼270nm) bonded on (001) Si substrates. Using SiCOI substrates, up to 3 μm of GaN could be grown crack-free. The structures were investigated by atomic force microscopy (root mean square=0.86 nm), high-resolution X-ray diffraction and low-temperature (20 K) photoluminescence (PL) (FWHM (full-width at half-maximum)=4.9 meV). Electroluminescence test heterostructures consisting of InGaN/GaN multiple quantum wells (MQWs) were also deposited on SiCOI. Room temperature PL measurements resulted in a QW emission at around 440 nm with a FWHM of 7.8nm. At electrical excitation, blue light emission was observed.

Original languageEnglish
Pages (from-to)500-505
Number of pages6
JournalJournal of Crystal Growth
Volume272
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 10

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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