Growth and characterization of GaN-based structures on SiCOI-engineered substrates

Y. Dikme, P. Van Gemmern, Yu-Cheng Lin, A. Szymakowski, H. Kalisch, B. Faure, C. Richtarch, H. Larhèche, P. Bove, F. Letertre, J. F. Woitok, K. Efthimiadis, R. H. Jansen, M. Heuken

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4 Citations (Scopus)

Abstract

Silicon carbide (SiC) still shows the best properties as substrate for the growth of GaN and its alloys but suffers from a very high price. An innovative alternative for this substrate are SiC/SiO 2 /Si (SiCOI) substrates, combining SiC and Si (silicon) substrate advantages thanks to the Smart Cut™ technology. These substrates consist of thin SiC layers (∼270nm) bonded on (001) Si substrates. Using SiCOI substrates, up to 3 μm of GaN could be grown crack-free. The structures were investigated by atomic force microscopy (root mean square=0.86 nm), high-resolution X-ray diffraction and low-temperature (20 K) photoluminescence (PL) (FWHM (full-width at half-maximum)=4.9 meV). Electroluminescence test heterostructures consisting of InGaN/GaN multiple quantum wells (MQWs) were also deposited on SiCOI. Room temperature PL measurements resulted in a QW emission at around 440 nm with a FWHM of 7.8nm. At electrical excitation, blue light emission was observed.

Original languageEnglish
Pages (from-to)500-505
Number of pages6
JournalJournal of Crystal Growth
Volume272
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 10

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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