Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates

Kun Ta Wu, P. H. Chang, S. T. Lien, N. C. Chen, Ching An Chang, Chuan-Feng Shih, W. C. Lien, Y. H. Wu, Shang Chia Chen, Y. H. Chang, C. T. Liang

Research output: Contribution to journalArticle

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Abstract

In order to grow high-quality GaN, we often choose sapphire as our substrates. However, silicon can be regarded as a new substrate due to its low cost and large wafer size. It is known that the difficulty of growing GaN on silicon is their large lattice mismatch (∼17%) and thermal mismatch (∼54%) between GaN and silicon. The usual process to reduce such mismatches is to grow an AlN layer as an intermediate layer. In this paper, we inserted a thin SiN layer between GaN and AlN to improve the quality of GaN, and the result showed that such thin SiN layer could greatly enhance the mobility of 2DEG formed at the interface of AlGaN and GaN. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire with more studies of growth techniques.

Original languageEnglish
Pages (from-to)566-568
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2006 May 1

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High electron mobility transistors
Silicon
high electron mobility transistors
Aluminum Oxide
silicon
Substrates
Sapphire
sapphire
Lattice mismatch
Two dimensional electron gas
wafers
aluminum gallium nitride
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Wu, Kun Ta ; Chang, P. H. ; Lien, S. T. ; Chen, N. C. ; Chang, Ching An ; Shih, Chuan-Feng ; Lien, W. C. ; Wu, Y. H. ; Chen, Shang Chia ; Chang, Y. H. ; Liang, C. T. / Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates. In: Physica E: Low-Dimensional Systems and Nanostructures. 2006 ; Vol. 32, No. 1-2 SPEC. ISS. pp. 566-568.
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abstract = "In order to grow high-quality GaN, we often choose sapphire as our substrates. However, silicon can be regarded as a new substrate due to its low cost and large wafer size. It is known that the difficulty of growing GaN on silicon is their large lattice mismatch (∼17{\%}) and thermal mismatch (∼54{\%}) between GaN and silicon. The usual process to reduce such mismatches is to grow an AlN layer as an intermediate layer. In this paper, we inserted a thin SiN layer between GaN and AlN to improve the quality of GaN, and the result showed that such thin SiN layer could greatly enhance the mobility of 2DEG formed at the interface of AlGaN and GaN. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire with more studies of growth techniques.",
author = "Wu, {Kun Ta} and Chang, {P. H.} and Lien, {S. T.} and Chen, {N. C.} and Chang, {Ching An} and Chuan-Feng Shih and Lien, {W. C.} and Wu, {Y. H.} and Chen, {Shang Chia} and Chang, {Y. H.} and Liang, {C. T.}",
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Wu, KT, Chang, PH, Lien, ST, Chen, NC, Chang, CA, Shih, C-F, Lien, WC, Wu, YH, Chen, SC, Chang, YH & Liang, CT 2006, 'Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates', Physica E: Low-Dimensional Systems and Nanostructures, vol. 32, no. 1-2 SPEC. ISS., pp. 566-568. https://doi.org/10.1016/j.physe.2005.12.115

Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates. / Wu, Kun Ta; Chang, P. H.; Lien, S. T.; Chen, N. C.; Chang, Ching An; Shih, Chuan-Feng; Lien, W. C.; Wu, Y. H.; Chen, Shang Chia; Chang, Y. H.; Liang, C. T.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2 SPEC. ISS., 01.05.2006, p. 566-568.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates

AU - Wu, Kun Ta

AU - Chang, P. H.

AU - Lien, S. T.

AU - Chen, N. C.

AU - Chang, Ching An

AU - Shih, Chuan-Feng

AU - Lien, W. C.

AU - Wu, Y. H.

AU - Chen, Shang Chia

AU - Chang, Y. H.

AU - Liang, C. T.

PY - 2006/5/1

Y1 - 2006/5/1

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AB - In order to grow high-quality GaN, we often choose sapphire as our substrates. However, silicon can be regarded as a new substrate due to its low cost and large wafer size. It is known that the difficulty of growing GaN on silicon is their large lattice mismatch (∼17%) and thermal mismatch (∼54%) between GaN and silicon. The usual process to reduce such mismatches is to grow an AlN layer as an intermediate layer. In this paper, we inserted a thin SiN layer between GaN and AlN to improve the quality of GaN, and the result showed that such thin SiN layer could greatly enhance the mobility of 2DEG formed at the interface of AlGaN and GaN. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire with more studies of growth techniques.

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SN - 1386-9477

IS - 1-2 SPEC. ISS.

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