Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application

Chih Jen Hsiao, Ramesh Kumar Kakkerla, Po Chun Chang, Franky Juanda Lumbantoruan, Tsu Ting Lee, Yueh Chin Lin, Shoou Jinn Chang, Edward Yi Chang

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Abstract

In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.

Original languageEnglish
Article number162108
JournalApplied Physics Letters
Volume111
Issue number16
DOIs
Publication statusPublished - 2017 Oct 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Hsiao, C. J., Kakkerla, R. K., Chang, P. C., Lumbantoruan, F. J., Lee, T. T., Lin, Y. C., Chang, S. J., & Chang, E. Y. (2017). Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application. Applied Physics Letters, 111(16), [162108]. https://doi.org/10.1063/1.5008737