Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices

Chuan-Pu Liu, Regime Chen, Yan Lin Lai

Research output: Contribution to conferencePaper

Abstract

The growth mode changing from two-dimensional to three-dimensional is promising in enhancing the efficiency of optical devices, such as light emitting diodes and laser. Thus, InCaN/GaN superlattice structures were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscope was used to obtain cross-sectional images of the samples. For the analysis of the layer structure, the ω -scans and rocking curves of x-ray diffraction were employed to examine strain, misorientation and periodicity of the supperlattice. The property of the origin of luminescence in the InGaN/GaN multiple quantum wells was determined by photoluminescence. The results show that high quality InGaN quantum dots in supperlattices are achieved, where the average size is 1-2 nm and the density is 9×10 12 cm -2 . The emitting wavelength can be varied by changing the growth rate for the active layers.

Original languageEnglish
Pages16-20
Number of pages5
Publication statusPublished - 2003 Jan 1
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03-10-1203-10-17

Fingerprint

Aluminum Oxide
Superlattices
Metallorganic chemical vapor deposition
Optical devices
Laser modes
Sapphire
Semiconductor quantum wells
Semiconductor quantum dots
Light emitting diodes
Luminescence
Photoluminescence
Electron microscopes
Diffraction
X rays
Wavelength
Lasers

All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

Liu, C-P., Chen, R., & Lai, Y. L. (2003). Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices. 16-20. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.
Liu, Chuan-Pu ; Chen, Regime ; Lai, Yan Lin. / Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.5 p.
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abstract = "The growth mode changing from two-dimensional to three-dimensional is promising in enhancing the efficiency of optical devices, such as light emitting diodes and laser. Thus, InCaN/GaN superlattice structures were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscope was used to obtain cross-sectional images of the samples. For the analysis of the layer structure, the ω -scans and rocking curves of x-ray diffraction were employed to examine strain, misorientation and periodicity of the supperlattice. The property of the origin of luminescence in the InGaN/GaN multiple quantum wells was determined by photoluminescence. The results show that high quality InGaN quantum dots in supperlattices are achieved, where the average size is 1-2 nm and the density is 9×10 12 cm -2 . The emitting wavelength can be varied by changing the growth rate for the active layers.",
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Liu, C-P, Chen, R & Lai, YL 2003, 'Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices' Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03-10-12 - 03-10-17, pp. 16-20.

Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices. / Liu, Chuan-Pu; Chen, Regime; Lai, Yan Lin.

2003. 16-20 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conferencePaper

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T1 - Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices

AU - Liu, Chuan-Pu

AU - Chen, Regime

AU - Lai, Yan Lin

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N2 - The growth mode changing from two-dimensional to three-dimensional is promising in enhancing the efficiency of optical devices, such as light emitting diodes and laser. Thus, InCaN/GaN superlattice structures were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscope was used to obtain cross-sectional images of the samples. For the analysis of the layer structure, the ω -scans and rocking curves of x-ray diffraction were employed to examine strain, misorientation and periodicity of the supperlattice. The property of the origin of luminescence in the InGaN/GaN multiple quantum wells was determined by photoluminescence. The results show that high quality InGaN quantum dots in supperlattices are achieved, where the average size is 1-2 nm and the density is 9×10 12 cm -2 . The emitting wavelength can be varied by changing the growth rate for the active layers.

AB - The growth mode changing from two-dimensional to three-dimensional is promising in enhancing the efficiency of optical devices, such as light emitting diodes and laser. Thus, InCaN/GaN superlattice structures were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscope was used to obtain cross-sectional images of the samples. For the analysis of the layer structure, the ω -scans and rocking curves of x-ray diffraction were employed to examine strain, misorientation and periodicity of the supperlattice. The property of the origin of luminescence in the InGaN/GaN multiple quantum wells was determined by photoluminescence. The results show that high quality InGaN quantum dots in supperlattices are achieved, where the average size is 1-2 nm and the density is 9×10 12 cm -2 . The emitting wavelength can be varied by changing the growth rate for the active layers.

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Liu C-P, Chen R, Lai YL. Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.