The growth mode changing from two-dimensional to three-dimensional is promising in enhancing the efficiency of optical devices, such as light emitting diodes and laser. Thus, InCaN/GaN superlattice structures were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscope was used to obtain cross-sectional images of the samples. For the analysis of the layer structure, the ω -scans and rocking curves of x-ray diffraction were employed to examine strain, misorientation and periodicity of the supperlattice. The property of the origin of luminescence in the InGaN/GaN multiple quantum wells was determined by photoluminescence. The results show that high quality InGaN quantum dots in supperlattices are achieved, where the average size is 1-2 nm and the density is 9×1012 cm -2. The emitting wavelength can be varied by changing the growth rate for the active layers.
|Number of pages||5|
|Publication status||Published - 2003 Jan 1|
|Event||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States|
Duration: 2003 Oct 12 → 2003 Oct 17
|Other||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium|
|Period||03-10-12 → 03-10-17|
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