Growth and characterization of InGaN/GaN multiple quantum well light-emitting diodes

Jinn-Kong Sheu, Gou Chung Chi, Yan Kuin Su, Ming Jiunn Jou

Research output: Contribution to journalArticle

Abstract

InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs was observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibited a blue-shift phenomenon when the injection current and laser power, were increased respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.

Original languageEnglish
Pages (from-to)219-225
Number of pages7
JournalJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume7
Issue number3
Publication statusPublished - 2000 Aug 1

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Semiconductor quantum wells
Light emitting diodes
Stark effect
Metallorganic vapor phase epitaxy
Piezoelectricity
Luminescence
Screening
Energy gap
Wavelength
Lasers
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

@article{3704525061124a42bf178add570f4dc7,
title = "Growth and characterization of InGaN/GaN multiple quantum well light-emitting diodes",
abstract = "InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs was observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibited a blue-shift phenomenon when the injection current and laser power, were increased respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.",
author = "Jinn-Kong Sheu and Chi, {Gou Chung} and Su, {Yan Kuin} and Jou, {Ming Jiunn}",
year = "2000",
month = "8",
day = "1",
language = "English",
volume = "7",
pages = "219--225",
journal = "International Journal of Electrical Engineering",
issn = "1812-3031",
publisher = "Chinese Institute of Electrical Engineering",
number = "3",

}

TY - JOUR

T1 - Growth and characterization of InGaN/GaN multiple quantum well light-emitting diodes

AU - Sheu, Jinn-Kong

AU - Chi, Gou Chung

AU - Su, Yan Kuin

AU - Jou, Ming Jiunn

PY - 2000/8/1

Y1 - 2000/8/1

N2 - InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs was observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibited a blue-shift phenomenon when the injection current and laser power, were increased respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.

AB - InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs was observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibited a blue-shift phenomenon when the injection current and laser power, were increased respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.

UR - http://www.scopus.com/inward/record.url?scp=0034245916&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034245916&partnerID=8YFLogxK

M3 - Article

VL - 7

SP - 219

EP - 225

JO - International Journal of Electrical Engineering

JF - International Journal of Electrical Engineering

SN - 1812-3031

IS - 3

ER -