InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs was observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibited a blue-shift phenomenon when the injection current and laser power, were increased respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.
|Number of pages||7|
|Journal||Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an|
|Publication status||Published - 2000 Aug 1|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering