Growth and characterization of InGaN/GaN multiple quantum well light-emitting diodes

Jinn Kong Sheu, Gou Chung Chi, Yan Kuin Su, Ming Jiunn Jou

Research output: Contribution to journalArticle

Abstract

InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs was observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibited a blue-shift phenomenon when the injection current and laser power, were increased respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.

Original languageEnglish
Pages (from-to)219-225
Number of pages7
JournalJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume7
Issue number3
Publication statusPublished - 2000 Aug 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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