Abstract
A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.
| Original language | English |
|---|---|
| Pages (from-to) | 330-335 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 570 |
| Issue number | PB |
| DOIs | |
| Publication status | Published - 2014 Nov 3 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
}
Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes. / Guan-Hung, Shen; Hong, Franklin Chau-Nan.
In: Thin Solid Films, Vol. 570, No. PB, 03.11.2014, p. 330-335.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes
AU - Guan-Hung, Shen
AU - Hong, Franklin Chau-Nan
PY - 2014/11/3
Y1 - 2014/11/3
N2 - A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.
AB - A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.
UR - http://www.scopus.com/inward/record.url?scp=84911993953&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84911993953&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2014.02.114
DO - 10.1016/j.tsf.2014.02.114
M3 - Article
VL - 570
SP - 330
EP - 335
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - PB
ER -