TY - JOUR
T1 - Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes
AU - Guan-Hung, Shen
AU - Hong, Franklin Chau Nan
N1 - Funding Information:
The authors gratefully acknowledge the financial support from the National Science Council of Taiwan under grants NSC-99-2221-E-006-197-MY3 and NSC-102-2221-E-006-240-MY3 .
Publisher Copyright:
© 2014 Elsevier B.V.
PY - 2014/11/3
Y1 - 2014/11/3
N2 - A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.
AB - A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.
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U2 - 10.1016/j.tsf.2014.02.114
DO - 10.1016/j.tsf.2014.02.114
M3 - Article
AN - SCOPUS:84911993953
VL - 570
SP - 330
EP - 335
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - PB
ER -