Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

Shen Guan-Hung, Franklin Chau-Nan Hong

Research output: Contribution to journalArticle

Abstract

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.

Original languageEnglish
Pages (from-to)330-335
Number of pages6
JournalThin Solid Films
Volume570
Issue numberPB
DOIs
Publication statusPublished - 2014 Nov 3

Fingerprint

Silicon
Nanorods
nanorods
Heterojunctions
heterojunctions
Diodes
diodes
Fabrication
fabrication
silicon
Nanostructures
High resolution transmission electron microscopy
Electron diffraction
Leakage currents
Crystal orientation
wurtzite
Chemical vapor deposition
leakage
electron diffraction
Optical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes",
abstract = "A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.",
author = "Shen Guan-Hung and Hong, {Franklin Chau-Nan}",
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Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes. / Guan-Hung, Shen; Hong, Franklin Chau-Nan.

In: Thin Solid Films, Vol. 570, No. PB, 03.11.2014, p. 330-335.

Research output: Contribution to journalArticle

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N2 - A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.

AB - A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10- 4 A at - 20 V bias, a forward current of 7.2 × 10- 3 A at 20 V bias, and the turn-on voltage at around 5.6 V.

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