Growth and Characterization of Nonpolar (101̄0) Zn 1-xMgxO(0 ≤ x ≤ 0.113) epitaxial films: A comparison of γ-LiAlO2 (100) and sapphire (101̄0) substrates

Wan Hsien Lin; Jih-Jen Wu; Mitch M.C. Chou; Liuwen Chang

doi:10.1021/cg900071z

Growth and Characterization of Nonpolar (101̄0) Zn _1-xMg_xO(0 ≤ x ≤ 0.113) epitaxial films: A comparison of γ-LiAlO₂ (100) and sapphire (101̄0) substrates

Wan Hsien Lin, Jih-Jen Wu, Mitch M.C. Chou, Liuwen Chang

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

γ-LiAlO₂ (100) and sapphire (101̄0) substrates have been employed to grow nonpolar (101̄0) Zn_1-xMg_xO films using metalorganic chemical vapor deposition. Zn_1-xMg _xO films with various Mg contents (0 ≤ x ≤ 0.113) are obtained by adjusting the partial pressure of the Mg metalorganic precursor in gas phase. Mg atoms incorporate within the films by means of substituting Zn. No segregated phase such as MgO or metal Mg is observed throughout the Zn _1-xMg_xO films. Structural characterization of the films indicates that γ-LiAlO₂ (100) is a superior substrate to sapphire (101̄0) for the growth of the nonpolar (101̄0) Zn _1-xMg_xO films. The [100]_LAO and [12̄10]_ZMO || [001]_LAO. On the other hand, the Zn_1-xMg_xO films with both (101̄0) and (101̄3) orientations are obtained on sapphire substrates although Zn _1-xMg_xO (101̄0) becomes dominant with increasing Mg content. In addition, room-temperature cathodoluminescence spectra of the epitaxial (101̄0) Zn_1-xMg_xO films show an obvious blue shift of the near-band-edge emission with increasing Mg content, demonstrating bandgap engineering in the epitaxial nonpolar (101̄0) Zn _1-xMg_xO films on the γ-LiAlO₂substrates.

Original language	English
Pages (from-to)	3301-3306
Number of pages	6
Journal	Crystal Growth and Design
Volume	9
Issue number	7
DOIs	https://doi.org/10.1021/cg900071z
Publication status	Published - 2009 Jul 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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title = "Growth and Characterization of Nonpolar (10{\=1}0) Zn 1-xMgxO(0 ≤ x ≤ 0.113) epitaxial films: A comparison of γ-LiAlO2 (100) and sapphire (10{\=1}0) substrates",

abstract = "γ-LiAlO2 (100) and sapphire (10{\=1}0) substrates have been employed to grow nonpolar (10{\=1}0) Zn1-xMgxO films using metalorganic chemical vapor deposition. Zn1-xMg xO films with various Mg contents (0 ≤ x ≤ 0.113) are obtained by adjusting the partial pressure of the Mg metalorganic precursor in gas phase. Mg atoms incorporate within the films by means of substituting Zn. No segregated phase such as MgO or metal Mg is observed throughout the Zn 1-xMgxO films. Structural characterization of the films indicates that γ-LiAlO2 (100) is a superior substrate to sapphire (10{\=1}0) for the growth of the nonpolar (10{\=1}0) Zn 1-xMgxO films. The [100]LAO and [1{\=2}10]ZMO || [001]LAO. On the other hand, the Zn1-xMgxO films with both (10{\=1}0) and (10{\=1}3) orientations are obtained on sapphire substrates although Zn 1-xMgxO (10{\=1}0) becomes dominant with increasing Mg content. In addition, room-temperature cathodoluminescence spectra of the epitaxial (10{\=1}0) Zn1-xMgxO films show an obvious blue shift of the near-band-edge emission with increasing Mg content, demonstrating bandgap engineering in the epitaxial nonpolar (10{\=1}0) Zn 1-xMgxO films on the γ-LiAlO2substrates.",

author = "Lin, {Wan Hsien} and Jih-Jen Wu and Chou, {Mitch M.C.} and Liuwen Chang",

year = "2009",

month = jul,

day = "1",

doi = "10.1021/cg900071z",

language = "English",

volume = "9",

pages = "3301--3306",

journal = "Crystal Growth and Design",

issn = "1528-7483",

publisher = "American Chemical Society",

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T1 - Growth and Characterization of Nonpolar (101̄0) Zn 1-xMgxO(0 ≤ x ≤ 0.113) epitaxial films

T2 - A comparison of γ-LiAlO2 (100) and sapphire (101̄0) substrates

AU - Lin, Wan Hsien

AU - Wu, Jih-Jen

AU - Chou, Mitch M.C.

AU - Chang, Liuwen

PY - 2009/7/1

Y1 - 2009/7/1

N2 - γ-LiAlO2 (100) and sapphire (101̄0) substrates have been employed to grow nonpolar (101̄0) Zn1-xMgxO films using metalorganic chemical vapor deposition. Zn1-xMg xO films with various Mg contents (0 ≤ x ≤ 0.113) are obtained by adjusting the partial pressure of the Mg metalorganic precursor in gas phase. Mg atoms incorporate within the films by means of substituting Zn. No segregated phase such as MgO or metal Mg is observed throughout the Zn 1-xMgxO films. Structural characterization of the films indicates that γ-LiAlO2 (100) is a superior substrate to sapphire (101̄0) for the growth of the nonpolar (101̄0) Zn 1-xMgxO films. The [100]LAO and [12̄10]ZMO || [001]LAO. On the other hand, the Zn1-xMgxO films with both (101̄0) and (101̄3) orientations are obtained on sapphire substrates although Zn 1-xMgxO (101̄0) becomes dominant with increasing Mg content. In addition, room-temperature cathodoluminescence spectra of the epitaxial (101̄0) Zn1-xMgxO films show an obvious blue shift of the near-band-edge emission with increasing Mg content, demonstrating bandgap engineering in the epitaxial nonpolar (101̄0) Zn 1-xMgxO films on the γ-LiAlO2substrates.

AB - γ-LiAlO2 (100) and sapphire (101̄0) substrates have been employed to grow nonpolar (101̄0) Zn1-xMgxO films using metalorganic chemical vapor deposition. Zn1-xMg xO films with various Mg contents (0 ≤ x ≤ 0.113) are obtained by adjusting the partial pressure of the Mg metalorganic precursor in gas phase. Mg atoms incorporate within the films by means of substituting Zn. No segregated phase such as MgO or metal Mg is observed throughout the Zn 1-xMgxO films. Structural characterization of the films indicates that γ-LiAlO2 (100) is a superior substrate to sapphire (101̄0) for the growth of the nonpolar (101̄0) Zn 1-xMgxO films. The [100]LAO and [12̄10]ZMO || [001]LAO. On the other hand, the Zn1-xMgxO films with both (101̄0) and (101̄3) orientations are obtained on sapphire substrates although Zn 1-xMgxO (101̄0) becomes dominant with increasing Mg content. In addition, room-temperature cathodoluminescence spectra of the epitaxial (101̄0) Zn1-xMgxO films show an obvious blue shift of the near-band-edge emission with increasing Mg content, demonstrating bandgap engineering in the epitaxial nonpolar (101̄0) Zn 1-xMgxO films on the γ-LiAlO2substrates.

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