Growth and characterization of pure and doped SnO2 films for H2 gas detection

Chang Hung Lin, Wei Che Chang, Xiaoding Qi

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)

Abstract

Pure and the transition metal (TM) doped SnO2 films were prepared by the sol-gel method. The surface morphology and microstructure of the grown films were characterized by a wide range of techniques. Generally, various TM doping resulted in a reduction of the particle size, as well as a smaller size of various surface features. The films were tested for the gas sensing applications. In the air containing 500 ppm H2, the optimum operating temperature for the pure SnO2 films was 250 °C, which showed a sensitivity of S=3.9 and a recovery time of 84 s. Doping of 5 at% W increased the sensitivity significantly (S=25.8) at the same operating temperature, while the recovery time was reduced to 72 s. For the 5at% Pd doped SnO2 films, the sensitivity was only slightly improved (S=4.4), however they showed the quickest recovery time of 60 s. Doping of Mn did not improve the H2 sensing sensitivity and the doped films showed a poor thermal stability at the elevated temperatures.

Original languageEnglish
Pages (from-to)476-481
Number of pages6
JournalProcedia Engineering
Volume36
DOIs
Publication statusPublished - 2012
Event2011 IUMRS International Conference in Asia, ICA 2011 - Taipei, Taiwan
Duration: 2011 Sep 192011 Sep 22

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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