Growth and characterization of sparsely dispersed ZnO nanowires

Ting Jen Hsueh; Cheng Liang Hsu; Shoou Jinn Chang; Yan Ru Lin; Tzer Shen Lin; I. Cherng Chen

doi:10.1149/1.2424415

Growth and characterization of sparsely dispersed ZnO nanowires

Ting Jen Hsueh, Cheng Liang Hsu, Shoou Jinn Chang, Yan Ru Lin, Tzer Shen Lin, I. Cherng Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This investigation describes the growth of sparsely dispersed vertical ZnO nanowires on sputtered-ZnO:Ga/sapphire templates by self-catalyzed vapor liquid solid method. Experimental results indicate that these ZnO nanowires grew with the preferred (002) orientation with good crystal quality. Conductive diamond-coated point probe forms Schottky contact on single ZnO nanowire with a sharp turn-on voltage of ∼2.5 V and a barrier height of approximately 0.38 eV.

Original language	English
Pages (from-to)	H153-H156
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	3
DOIs	https://doi.org/10.1149/1.2424415
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2424415

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abstract = "This investigation describes the growth of sparsely dispersed vertical ZnO nanowires on sputtered-ZnO:Ga/sapphire templates by self-catalyzed vapor liquid solid method. Experimental results indicate that these ZnO nanowires grew with the preferred (002) orientation with good crystal quality. Conductive diamond-coated point probe forms Schottky contact on single ZnO nanowire with a sharp turn-on voltage of ∼2.5 V and a barrier height of approximately 0.38 eV.",

author = "Hsueh, {Ting Jen} and Hsu, {Cheng Liang} and Chang, {Shoou Jinn} and Lin, {Yan Ru} and Lin, {Tzer Shen} and Chen, {I. Cherng}",

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T1 - Growth and characterization of sparsely dispersed ZnO nanowires

AU - Hsueh, Ting Jen

AU - Hsu, Cheng Liang

AU - Chang, Shoou Jinn

AU - Lin, Yan Ru

AU - Lin, Tzer Shen

AU - Chen, I. Cherng

PY - 2007

Y1 - 2007

N2 - This investigation describes the growth of sparsely dispersed vertical ZnO nanowires on sputtered-ZnO:Ga/sapphire templates by self-catalyzed vapor liquid solid method. Experimental results indicate that these ZnO nanowires grew with the preferred (002) orientation with good crystal quality. Conductive diamond-coated point probe forms Schottky contact on single ZnO nanowire with a sharp turn-on voltage of ∼2.5 V and a barrier height of approximately 0.38 eV.

AB - This investigation describes the growth of sparsely dispersed vertical ZnO nanowires on sputtered-ZnO:Ga/sapphire templates by self-catalyzed vapor liquid solid method. Experimental results indicate that these ZnO nanowires grew with the preferred (002) orientation with good crystal quality. Conductive diamond-coated point probe forms Schottky contact on single ZnO nanowire with a sharp turn-on voltage of ∼2.5 V and a barrier height of approximately 0.38 eV.

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DO - 10.1149/1.2424415

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AN - SCOPUS:33846946185

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SP - H153-H156

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Growth and characterization of sparsely dispersed ZnO nanowires

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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