Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

Shui Jinn Wang, Chao Hsuing Chen, Shu Cheng Chang, Kai Ming Uang, Chuan Ping Juan, Huang Chung Cheng

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

The growth of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films was discussed. It was observed that the straight nanowires with a density of 250-260μm-2 and length/diameter in the range of 0.2-0.3μm/13-15 nm were obtained from the 700°C-annealed samples. It was also observed that the self-catalytic growth of W2C nanowires was attributed to the formation of α-W 2C phase caused by carbon depletion in the WCx films during thermal annealing. The results show that the low turn-on field paired with high packing density and simple growth process indicates that W 2C nanowire could be a potential material for field emitters.

Original languageEnglish
Pages (from-to)2358-2360
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number12
DOIs
Publication statusPublished - 2004 Sep 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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