Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

Shui Jinn Wang; Chao Hsuing Chen; Shu Cheng Chang; Kai Ming Uang; Chuan Ping Juan; Huang Chung Cheng

doi:10.1063/1.1791322

Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WC_x films

Shui Jinn Wang
, Chao Hsuing Chen
, Shu Cheng Chang
, Kai Ming Uang
, Chuan Ping Juan
, Huang Chung Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The growth of tungsten carbide nanowires by thermal annealing of sputter-deposited WC_x films was discussed. It was observed that the straight nanowires with a density of 250-260μm^-2 and length/diameter in the range of 0.2-0.3μm/13-15 nm were obtained from the 700°C-annealed samples. It was also observed that the self-catalytic growth of W₂C nanowires was attributed to the formation of α-W ₂C phase caused by carbon depletion in the WC_x films during thermal annealing. The results show that the low turn-on field paired with high packing density and simple growth process indicates that W ₂C nanowire could be a potential material for field emitters.

Original language	English
Pages (from-to)	2358-2360
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1791322
Publication status	Published - 2004 Sept 20

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1791322

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@article{898e0fa405f944f9b9b933010d0f222f,

title = "Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films",

abstract = "The growth of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films was discussed. It was observed that the straight nanowires with a density of 250-260μm-2 and length/diameter in the range of 0.2-0.3μm/13-15 nm were obtained from the 700°C-annealed samples. It was also observed that the self-catalytic growth of W2C nanowires was attributed to the formation of α-W 2C phase caused by carbon depletion in the WCx films during thermal annealing. The results show that the low turn-on field paired with high packing density and simple growth process indicates that W 2C nanowire could be a potential material for field emitters.",

author = "Wang, \{Shui Jinn\} and Chen, \{Chao Hsuing\} and Chang, \{Shu Cheng\} and Uang, \{Kai Ming\} and Juan, \{Chuan Ping\} and Cheng, \{Huang Chung\}",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China, under Contract No. NSC 92-2218-E-006-033. The authors are indebted to Dr. W. J. Chen, Dept. of E. E., National Huwei Institute of Technology, for the technical support in TEM measurements.",

year = "2004",

month = sep,

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doi = "10.1063/1.1791322",

language = "English",

volume = "85",

pages = "2358--2360",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

AU - Wang, Shui Jinn

AU - Chen, Chao Hsuing

AU - Chang, Shu Cheng

AU - Uang, Kai Ming

AU - Juan, Chuan Ping

AU - Cheng, Huang Chung

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China, under Contract No. NSC 92-2218-E-006-033. The authors are indebted to Dr. W. J. Chen, Dept. of E. E., National Huwei Institute of Technology, for the technical support in TEM measurements.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - The growth of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films was discussed. It was observed that the straight nanowires with a density of 250-260μm-2 and length/diameter in the range of 0.2-0.3μm/13-15 nm were obtained from the 700°C-annealed samples. It was also observed that the self-catalytic growth of W2C nanowires was attributed to the formation of α-W 2C phase caused by carbon depletion in the WCx films during thermal annealing. The results show that the low turn-on field paired with high packing density and simple growth process indicates that W 2C nanowire could be a potential material for field emitters.

AB - The growth of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films was discussed. It was observed that the straight nanowires with a density of 250-260μm-2 and length/diameter in the range of 0.2-0.3μm/13-15 nm were obtained from the 700°C-annealed samples. It was also observed that the self-catalytic growth of W2C nanowires was attributed to the formation of α-W 2C phase caused by carbon depletion in the WCx films during thermal annealing. The results show that the low turn-on field paired with high packing density and simple growth process indicates that W 2C nanowire could be a potential material for field emitters.

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U2 - 10.1063/1.1791322

DO - 10.1063/1.1791322

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SN - 0003-6951

VL - 85

SP - 2358

EP - 2360

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WC_x films

Abstract

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