TY - JOUR
T1 - Growth and crystal structure investigation of InAs/GaSb heterostructure nanowires on Si Substrate
AU - Kakkerla, Ramesh Kumar
AU - Hsiao, Chih Jen
AU - Anandan, Deepak
AU - Singh, Sankalp Kumar
AU - Chang, Sheng Po
AU - Pande, Krishna P.
AU - Chang, Edward Yi
N1 - Funding Information:
Manuscript received August 18, 2018; accepted September 27, 2018. Date of publication October 11, 2018; date of current version November 8, 2018. This work was supported in part by the TSMC, NCTU-UCB I-RiCE Program, and in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 106-2911-I-009-301. The review of this paper was arranged by associate editor A. Ural. (Corresponding author: Ramesh Kumar Kakkerla.) R. K. Kakkerla, D. Anandan, S. K. Singh, and E. Y. Chang are with the Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C. (e-mail:,rameshchandra145@gmail.com; ckdeepak16@gmail.com; sankalpsingh4u@gmail.com; edc@mail.nctu.edu. tw).
Publisher Copyright:
© 2002-2012 IEEE.
PY - 2018/11
Y1 - 2018/11
N2 - We report gold-free growth of vertically aligned InAs/GaSb heterostructure nanowires (NWs) on Si(111) substrate by metal organic chemical vapor deposition technique. The effect of growth temperature on morphology and growth rate for InAs and InAs/GaSb heterostructure NWs were investigated. A combination of high material flow rates and optimum temperature (600 °C) has given better crystal quality of InAs nanowires. The morphology and shell thickness of NWs as observed by scanning electron microscope and transmission electron microscope (TEM) measurements can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core at certain growth temperatures. Crystal structure of InAs and InAs/GaSb heterostructure NWs was analyzed by high-resolution TEM and fast Fourier transform analysis. Using good crystalline InAs core grown at optimized growth temperature (600 °C), GaSb shell has been grown without any misfit dislocations at the core-shell interface. Basic electrical properties have been measured by forming ohmic contacts. I-V characteristics exhibit linear response indicating good ohmic behavior. These results show good control over InAs NWs growth, the GaSb shell thickness, and its crystal quality, which are essential for future nanoelectronic devices such as tunneling FET.
AB - We report gold-free growth of vertically aligned InAs/GaSb heterostructure nanowires (NWs) on Si(111) substrate by metal organic chemical vapor deposition technique. The effect of growth temperature on morphology and growth rate for InAs and InAs/GaSb heterostructure NWs were investigated. A combination of high material flow rates and optimum temperature (600 °C) has given better crystal quality of InAs nanowires. The morphology and shell thickness of NWs as observed by scanning electron microscope and transmission electron microscope (TEM) measurements can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core at certain growth temperatures. Crystal structure of InAs and InAs/GaSb heterostructure NWs was analyzed by high-resolution TEM and fast Fourier transform analysis. Using good crystalline InAs core grown at optimized growth temperature (600 °C), GaSb shell has been grown without any misfit dislocations at the core-shell interface. Basic electrical properties have been measured by forming ohmic contacts. I-V characteristics exhibit linear response indicating good ohmic behavior. These results show good control over InAs NWs growth, the GaSb shell thickness, and its crystal quality, which are essential for future nanoelectronic devices such as tunneling FET.
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U2 - 10.1109/TNANO.2018.2874271
DO - 10.1109/TNANO.2018.2874271
M3 - Article
AN - SCOPUS:85055017586
VL - 17
SP - 1151
EP - 1158
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
SN - 1536-125X
IS - 6
M1 - 8490236
ER -