Abstract
The authors report the growth of high density ZnSe0.9Te 0.1 nanotips by molecular beam epitaxy and the fabrication of ZnSeTe nanotip photodetector. It was found that the as-grown ZnSe0.9Te 0.1 nanotips were twinned with alternative multidomains and mixture of cubic zinc-blende/hexagonal wurtzite phases. With 5-V applied bias, it was found that photocurrent to dark current contrast ratio of the fabricated photodetector was larger than 700.
| Original language | English |
|---|---|
| Article number | 5382566 |
| Pages (from-to) | 379-384 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 10 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 May |
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering
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