Growth and properties of Core-shelled SiC-SiO 2 nanowires using chemical vapor deposition

Kun Hou Liao, Wan Yu Wu, Bol Wen Yang, Jyh-Ming Ting

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Core-shelled SiC-SiO 2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 1100°C. The average diameter and length are 30 nm and in the order of 10 1 μm, respectively. The SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 71° to the nanowires axis. The existence of the SiO 2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested.

Original languageEnglish
Pages (from-to)100-107
Number of pages8
JournalInternational Journal of Applied Ceramic Technology
Volume9
Issue number1
DOIs
Publication statusPublished - 2012 Jan

Fingerprint

Nanowires
Chemical vapor deposition
nanowires
vapor deposition
Cathodoluminescence
High resolution transmission electron microscopy
cathodoluminescence
Diffraction patterns
diffraction patterns
Vapors
vapors
Crystalline materials
catalysts
transmission electron microscopy
Catalysts
high resolution
Substrates
Substrate
Catalyst
Electron microscopy

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Marketing
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

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abstract = "Core-shelled SiC-SiO 2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 1100°C. The average diameter and length are 30 nm and in the order of 10 1 μm, respectively. The SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 71° to the nanowires axis. The existence of the SiO 2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested.",
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Growth and properties of Core-shelled SiC-SiO 2 nanowires using chemical vapor deposition. / Liao, Kun Hou; Wu, Wan Yu; Yang, Bol Wen; Ting, Jyh-Ming.

In: International Journal of Applied Ceramic Technology, Vol. 9, No. 1, 01.2012, p. 100-107.

Research output: Contribution to journalArticle

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