Core-shelled SiC-SiO 2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 1100°C. The average diameter and length are 30 nm and in the order of 10 1 μm, respectively. The SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 71° to the nanowires axis. The existence of the SiO 2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested.
|Number of pages||8|
|Journal||International Journal of Applied Ceramic Technology|
|Publication status||Published - 2012 Jan 1|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry