Abstract
Core-shelled SiC-SiO 2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 1100°C. The average diameter and length are 30 nm and in the order of 10 1 μm, respectively. The SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 71° to the nanowires axis. The existence of the SiO 2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested.
Original language | English |
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Pages (from-to) | 100-107 |
Number of pages | 8 |
Journal | International Journal of Applied Ceramic Technology |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2012 Jan |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Marketing
- Materials Chemistry