Growth and properties of Core-shelled SiC-SiO 2 nanowires using chemical vapor deposition

Kun Hou Liao, Wan Yu Wu, Bol Wen Yang, Jyh Ming Ting

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Core-shelled SiC-SiO 2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 1100°C. The average diameter and length are 30 nm and in the order of 10 1 μm, respectively. The SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 71° to the nanowires axis. The existence of the SiO 2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested.

Original languageEnglish
Pages (from-to)100-107
Number of pages8
JournalInternational Journal of Applied Ceramic Technology
Issue number1
Publication statusPublished - 2012 Jan 1

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Marketing
  • Materials Chemistry

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