GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.

Y. K. Su, C. Y. Chang, T. S. Wu, M. K. Lee, M. P. Houng, L. G. Chen

Research output: Contribution to conference › Paper › peer-review

All Science Journal Classification (ASJC) codes

@conference{2185c0c8648b4bfea1d7c655826c4250,

title = "GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.",

author = "Su, {Y. K.} and Chang, {C. Y.} and Wu, {T. S.} and Lee, {M. K.} and Houng, {M. P.} and Chen, {L. G.}",

year = "1981",

language = "English",

pages = "387--392",

}

TY - CONF

T1 - GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.

AU - Su, Y. K.

AU - Chang, C. Y.

AU - Wu, T. S.

AU - Lee, M. K.

AU - Houng, M. P.

AU - Chen, L. G.

PY - 1981

Y1 - 1981

UR - http://www.scopus.com/inward/record.url?scp=0019662098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019662098&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0019662098

SP - 387

EP - 392

ER -