GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.

Y. K. Su, C. Y. Chang, T. S. Wu, M. K. Lee, M. P. Houng, L. G. Chen

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Pages387-392
Number of pages6
Publication statusPublished - 1981

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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