GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.

Y. K. Su, C. Y. Chang, T. S. Wu, M. K. Lee, Mau-phon Houng, L. G. Chen

Research output: Contribution to conferencePaper

Original languageEnglish
Pages387-392
Number of pages6
Publication statusPublished - 1981 Dec 1

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Gallium phosphide
Metallorganic chemical vapor deposition
Heterojunctions
Chemical vapor deposition
Single crystals
Silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Su, Y. K., Chang, C. Y., Wu, T. S., Lee, M. K., Houng, M., & Chen, L. G. (1981). GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.. 387-392.
Su, Y. K. ; Chang, C. Y. ; Wu, T. S. ; Lee, M. K. ; Houng, Mau-phon ; Chen, L. G. / GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD. 6 p.
@conference{2185c0c8648b4bfea1d7c655826c4250,
title = "GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.",
author = "Su, {Y. K.} and Chang, {C. Y.} and Wu, {T. S.} and Lee, {M. K.} and Mau-phon Houng and Chen, {L. G.}",
year = "1981",
month = "12",
day = "1",
language = "English",
pages = "387--392",

}

Su, YK, Chang, CY, Wu, TS, Lee, MK, Houng, M & Chen, LG 1981, 'GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.' pp. 387-392.

GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD. / Su, Y. K.; Chang, C. Y.; Wu, T. S.; Lee, M. K.; Houng, Mau-phon; Chen, L. G.

1981. 387-392.

Research output: Contribution to conferencePaper

TY - CONF

T1 - GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.

AU - Su, Y. K.

AU - Chang, C. Y.

AU - Wu, T. S.

AU - Lee, M. K.

AU - Houng, Mau-phon

AU - Chen, L. G.

PY - 1981/12/1

Y1 - 1981/12/1

UR - http://www.scopus.com/inward/record.url?scp=0019662098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019662098&partnerID=8YFLogxK

M3 - Paper

SP - 387

EP - 392

ER -

Su YK, Chang CY, Wu TS, Lee MK, Houng M, Chen LG. GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.. 1981.