Growth and study of self-organized Ge quantum wires on Si(111) substrates

G. Jin, Y. S. Tang, J. L. Liu, K. L. Wang

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Self-organized Ge quantum wires on Si(111) substrates were grown by forming regular atomic steps followed by Ge deposition. Optical studies of the Ge wires suggest that these wires have a built-in biaxial strain equivalent to about 1% lattice mismatch. In addition, quantized optical transitions due to the confinement in Ge wire are also observed.

Original languageEnglish
Pages (from-to)2471-2473
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number17
DOIs
Publication statusPublished - 1999 Apr 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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