Growth and study of self-organized Ge quantum wires on Si(111) substrates

G. Jin; Y. S. Tang; J. L. Liu; K. L. Wang

doi:10.1063/1.123884

Growth and study of self-organized Ge quantum wires on Si(111) substrates

G. Jin, Y. S. Tang, J. L. Liu, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Self-organized Ge quantum wires on Si(111) substrates were grown by forming regular atomic steps followed by Ge deposition. Optical studies of the Ge wires suggest that these wires have a built-in biaxial strain equivalent to about 1% lattice mismatch. In addition, quantized optical transitions due to the confinement in Ge wire are also observed.

Original language	English
Pages (from-to)	2471-2473
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	17
DOIs	https://doi.org/10.1063/1.123884
Publication status	Published - 1999 Apr 26

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123884

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title = "Growth and study of self-organized Ge quantum wires on Si(111) substrates",

abstract = "Self-organized Ge quantum wires on Si(111) substrates were grown by forming regular atomic steps followed by Ge deposition. Optical studies of the Ge wires suggest that these wires have a built-in biaxial strain equivalent to about 1% lattice mismatch. In addition, quantized optical transitions due to the confinement in Ge wire are also observed.",

author = "G. Jin and Tang, {Y. S.} and Liu, {J. L.} and Wang, {K. L.}",

year = "1999",

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AU - Jin, G.

AU - Tang, Y. S.

AU - Liu, J. L.

AU - Wang, K. L.

PY - 1999/4/26

Y1 - 1999/4/26

N2 - Self-organized Ge quantum wires on Si(111) substrates were grown by forming regular atomic steps followed by Ge deposition. Optical studies of the Ge wires suggest that these wires have a built-in biaxial strain equivalent to about 1% lattice mismatch. In addition, quantized optical transitions due to the confinement in Ge wire are also observed.

AB - Self-organized Ge quantum wires on Si(111) substrates were grown by forming regular atomic steps followed by Ge deposition. Optical studies of the Ge wires suggest that these wires have a built-in biaxial strain equivalent to about 1% lattice mismatch. In addition, quantized optical transitions due to the confinement in Ge wire are also observed.

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Growth and study of self-organized Ge quantum wires on Si(111) substrates

Abstract

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