Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by chemical vapor deposition

Mitch M.C. Chou, Liuwen Chang, Chenlong Chen, Wen Fu Yang, Chu An Li, Jih Jen Wu

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11 Citations (Scopus)


Nonpolar gallium nitride (GaN) epitaxial film was grown on a nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by a versatile chemical vapor deposition (CVD) method. LiAlO2 single crystal was grown by the Czochralski (Cz) method. Epi-ready LiAlO2 single-crystal substrate with RMS roughness of 0.24-0.32 nm were used for all experiments. The dependence of growth characteristics on the growth temperatures and deposition time was investigated. The orientation of GaN film was identified as (1 0 1̄ 0) m-plane by X-ray diffraction pattern. The characterization of detailed structure of the nonpolar GaN epilayer was done by transmission electron microscopy (TEM). Optical properties examined by photoluminescence spectra exhibit a strong near-band-edge emission peak at 3.37 eV and a weak yellow band emission.

Original languageEnglish
Pages (from-to)448-451
Number of pages4
JournalJournal of Crystal Growth
Issue number3
Publication statusPublished - 2009 Jan 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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