Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by chemical vapor deposition

Mitch M.C. Chou; Liuwen Chang; Chenlong Chen; Wen Fu Yang; Chu An Li; Jih Jen Wu

doi:10.1016/j.jcrysgro.2008.09.053

Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO₂ substrate by chemical vapor deposition

Mitch M.C. Chou, Liuwen Chang, Chenlong Chen, Wen Fu Yang, Chu An Li, Jih Jen Wu

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Nonpolar gallium nitride (GaN) epitaxial film was grown on a nearly lattice-matched (1 0 0) γ-LiAlO₂ substrate by a versatile chemical vapor deposition (CVD) method. LiAlO₂ single crystal was grown by the Czochralski (Cz) method. Epi-ready LiAlO₂ single-crystal substrate with RMS roughness of 0.24-0.32 nm were used for all experiments. The dependence of growth characteristics on the growth temperatures and deposition time was investigated. The orientation of GaN film was identified as (1 0 1̄ 0) m-plane by X-ray diffraction pattern. The characterization of detailed structure of the nonpolar GaN epilayer was done by transmission electron microscopy (TEM). Optical properties examined by photoluminescence spectra exhibit a strong near-band-edge emission peak at 3.37 eV and a weak yellow band emission.

Original language	English
Pages (from-to)	448-451
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.053
Publication status	Published - 2009 Jan 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by chemical vapor deposition",

abstract = "Nonpolar gallium nitride (GaN) epitaxial film was grown on a nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by a versatile chemical vapor deposition (CVD) method. LiAlO2 single crystal was grown by the Czochralski (Cz) method. Epi-ready LiAlO2 single-crystal substrate with RMS roughness of 0.24-0.32 nm were used for all experiments. The dependence of growth characteristics on the growth temperatures and deposition time was investigated. The orientation of GaN film was identified as (1 0 {\=1} 0) m-plane by X-ray diffraction pattern. The characterization of detailed structure of the nonpolar GaN epilayer was done by transmission electron microscopy (TEM). Optical properties examined by photoluminescence spectra exhibit a strong near-band-edge emission peak at 3.37 eV and a weak yellow band emission.",

author = "Chou, {Mitch M.C.} and Liuwen Chang and Chenlong Chen and Yang, {Wen Fu} and Li, {Chu An} and Wu, {Jih Jen}",

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T1 - Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by chemical vapor deposition

AU - Chou, Mitch M.C.

AU - Chang, Liuwen

AU - Chen, Chenlong

AU - Yang, Wen Fu

AU - Li, Chu An

AU - Wu, Jih Jen

PY - 2009/1/15

Y1 - 2009/1/15

N2 - Nonpolar gallium nitride (GaN) epitaxial film was grown on a nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by a versatile chemical vapor deposition (CVD) method. LiAlO2 single crystal was grown by the Czochralski (Cz) method. Epi-ready LiAlO2 single-crystal substrate with RMS roughness of 0.24-0.32 nm were used for all experiments. The dependence of growth characteristics on the growth temperatures and deposition time was investigated. The orientation of GaN film was identified as (1 0 1̄ 0) m-plane by X-ray diffraction pattern. The characterization of detailed structure of the nonpolar GaN epilayer was done by transmission electron microscopy (TEM). Optical properties examined by photoluminescence spectra exhibit a strong near-band-edge emission peak at 3.37 eV and a weak yellow band emission.

AB - Nonpolar gallium nitride (GaN) epitaxial film was grown on a nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by a versatile chemical vapor deposition (CVD) method. LiAlO2 single crystal was grown by the Czochralski (Cz) method. Epi-ready LiAlO2 single-crystal substrate with RMS roughness of 0.24-0.32 nm were used for all experiments. The dependence of growth characteristics on the growth temperatures and deposition time was investigated. The orientation of GaN film was identified as (1 0 1̄ 0) m-plane by X-ray diffraction pattern. The characterization of detailed structure of the nonpolar GaN epilayer was done by transmission electron microscopy (TEM). Optical properties examined by photoluminescence spectra exhibit a strong near-band-edge emission peak at 3.37 eV and a weak yellow band emission.

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