Growth, characterization, and properties of carbon nitride with and without silicon addition

L. C. Chen, C. T. Wu, J. J. Wu, K. H. Chen

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.

Original languageEnglish
Pages (from-to)333-348
Number of pages16
JournalInternational Journal of Modern Physics B
Volume14
Issue number2-3
DOIs
Publication statusPublished - 2000 Jan 30

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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