Growth flux ratio dependence of microwave devices in molecular beam epitaxy

Y. C. Chou, Ching-Ting Lee, F. Y. Juang, C. C. Chang, K. Chou

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of beam equivalent pressure ratio PAs4/P Ga on electrical and microwave performance of GaAs low-noise metal-semiconductor field-effect transistors grown by molecular beam epitaxy were demonstrated. From experimental results, superior performances were achieved at the minimum beam equivalent pressure ratio of 30 under arsenic-stabilized condition. The optimum noise figure and its associated gain were attributed to the higher quality of the molecular beam epitaxial material at optimal growth conditions. An explanation of the experimental results was also proposed.

Original languageEnglish
Pages (from-to)2109-2111
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number21
DOIs
Publication statusPublished - 1989 Dec 1

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pressure ratio
molecular beam epitaxy
microwaves
arsenic
low noise
molecular beams
field effect transistors
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chou, Y. C., Lee, C-T., Juang, F. Y., Chang, C. C., & Chou, K. (1989). Growth flux ratio dependence of microwave devices in molecular beam epitaxy. Applied Physics Letters, 54(21), 2109-2111. https://doi.org/10.1063/1.101143
Chou, Y. C. ; Lee, Ching-Ting ; Juang, F. Y. ; Chang, C. C. ; Chou, K. / Growth flux ratio dependence of microwave devices in molecular beam epitaxy. In: Applied Physics Letters. 1989 ; Vol. 54, No. 21. pp. 2109-2111.
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Chou, YC, Lee, C-T, Juang, FY, Chang, CC & Chou, K 1989, 'Growth flux ratio dependence of microwave devices in molecular beam epitaxy', Applied Physics Letters, vol. 54, no. 21, pp. 2109-2111. https://doi.org/10.1063/1.101143

Growth flux ratio dependence of microwave devices in molecular beam epitaxy. / Chou, Y. C.; Lee, Ching-Ting; Juang, F. Y.; Chang, C. C.; Chou, K.

In: Applied Physics Letters, Vol. 54, No. 21, 01.12.1989, p. 2109-2111.

Research output: Contribution to journalArticle

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