Growth kinetics simulation of the Al-Ga self-organization on (100) GaAs vicinal surfaces

Yan Ten Lu, Pierre Petroff, Horia Metiu

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We present results of a stochastic kinetic simulation of the segregation of Al and Ga during the mobility-enhanced epitaxial deposition on the As face of a stepped (100) GaAs surface.

Original languageEnglish
Pages (from-to)2683-2685
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number25
DOIs
Publication statusPublished - 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Growth kinetics simulation of the Al-Ga self-organization on (100) GaAs vicinal surfaces'. Together they form a unique fingerprint.

Cite this