Growth mechanism and field emission characteristics of GaO/GaN nanotips using iodine-assisted enhanced focused ion beam etching

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Bohr Ran Huang, Bo Cheng Lin, Kuan Jen Chen, Tse Pu Chen, Wen I. Hsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

GaN nanorods are fabricated with an AgO mask by a process of iodine-assisted focused ion beam etching (IFIBE). The transformation from GaN nanorod to GaN nanotip structure, the thermal treatment uses a high temperature of 800°C in air to increase the partial oxygen pressure resulting in the formation of a double mask, GaO and AgO. In addition, the Ag clusters react with the iodine gas to affect the etching rate and retain a GaO zone on the GaN nanotip arrays. Oxide-capped GaN nanotips can be applied as field emitter. The turn-on electric field was 2.2V/um when the current density was 0.1mA/cm2.

Original languageEnglish
Pages (from-to)594-597
Number of pages4
JournalCurrent Nanoscience
Volume7
Issue number4
DOIs
Publication statusPublished - 2011 Aug

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Bioengineering
  • Medicine (miscellaneous)
  • Biomedical Engineering
  • Pharmaceutical Science

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