Growth morphology and surface-acoustic-wave measurements of AIN films on sapphire

J. K. Liu, K. M. Lakin, K. L. Wang

Research output: Contribution to journalArticlepeer-review

96 Citations (Scopus)

Abstract

Aluminum nitride epitaxial films of thicknesses greater than 10 μ with excellent mechanical and chemical stability have been grown on R-plane sapphire substrates. The orientation relationship of single-crystal AlN on sapphire is discussed. Examination of the as-grown AlN film surface with a scanning electron microscope identifies the growth morphology and enables differentiation between good and poor quality films. The surface-acoustic-wave coupling constant K 2 and propagation velocity Vs are measured out to a thickness-to-wavelength ratio t/λ=0.75 with typical K2 values of 0.8% and Vs of 6.1 km/sec. Preliminary results also indicate that AlN-sapphire interfacial strain extends about 1 μ into the AlN film.

Original languageEnglish
Pages (from-to)3703-3706
Number of pages4
JournalJournal of Applied Physics
Volume46
Issue number9
DOIs
Publication statusPublished - 1975

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Growth morphology and surface-acoustic-wave measurements of AIN films on sapphire'. Together they form a unique fingerprint.

Cite this