TY - JOUR
T1 - Growth of 3C-SiC films on Si substrates by vapor-liquid-solid tri-phase epitaxy
AU - Liang, Yu Ling
AU - Lu, Shih Zong
AU - Lee, Hsin Ying
AU - Qi, Xiaoding
AU - Huang, Jow Lay
N1 - Funding Information:
The work was partially supported by the National Science Council of Taiwan under the grant number: NSC-102–2221-E-006–057-MY3 , and by the National Cheng Kung University of Taiwan via the Top University Project. We are indebted to the Solar Applied Materials Technology Corp., Taiwan, for their support in supplying some experiment consumables.
Publisher Copyright:
© 2015 Elsevier Ltd. and Techna Group S.r.l. All rights reserved.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - Cubic SiC films (3C-SiC) were deposited on (111) Si substrates by a vapor-liquid-solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and then methane (carbon source) was diffused into the liquid layer to react with Si, leading to the growth of SiC on the substrate. Copper showed some good properties as the flux, including high silicon and carbon solubility, low growth temperature and low volatility. Suitable growth parameters to go with the copper flux were identified, under which (111) textured 3C-SiC films were grown. Small numbers of (220) grains were observed to embed in the (111) films, which were difficult to avoid completely. Etching pits of the Cu melt on the substrate surface may act as the preferred sites for the growth of (220) grains.
AB - Cubic SiC films (3C-SiC) were deposited on (111) Si substrates by a vapor-liquid-solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and then methane (carbon source) was diffused into the liquid layer to react with Si, leading to the growth of SiC on the substrate. Copper showed some good properties as the flux, including high silicon and carbon solubility, low growth temperature and low volatility. Suitable growth parameters to go with the copper flux were identified, under which (111) textured 3C-SiC films were grown. Small numbers of (220) grains were observed to embed in the (111) films, which were difficult to avoid completely. Etching pits of the Cu melt on the substrate surface may act as the preferred sites for the growth of (220) grains.
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U2 - 10.1016/j.ceramint.2015.02.091
DO - 10.1016/j.ceramint.2015.02.091
M3 - Article
AN - SCOPUS:84927575481
SN - 0272-8842
VL - 41
SP - 7640
EP - 7644
JO - Ceramics International
JF - Ceramics International
IS - 6
ER -