Growth of chromium carbide capped-carbon nanotip using bias-assisted microwave plasma chemical vapor deposition

C. H. Hsu, S. C. Shi, C. F. Chen

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Chromium carbide capped-carbon nanotips were synthesized using bias-assisted microwave plasma chemical vapor deposition. Such a material grew up to several hundreds of nanometer long and tens of nanometer in diameter. The applied bias voltage is a significant parameter in the growth process whereas the higher bias voltage is effective in increasing the growth rate. However, the higher bias voltage also contributes to a rapid formation of chromium carbide which leads to a shorter length of carbon nanotip at the same time. Higher ion energies also vary the tip diameter due to strong ion bombardment which is a competitor to the deposition process. Our investigations revealed that the growth of chromium carbide capped-carbon nanotips reaches a limit due to the full carburization of chromium.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalThin Solid Films
Volume469-470
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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