TY - JOUR
T1 - Growth of diamond by sequential deposition and etching process using hot filament CVD
AU - Wei, J.
AU - Tzeng, Y.
N1 - Funding Information:
This work was supportedin part by the Office of Naval Research, SDIO/IST-Naval Surface Warfare Center, and Alabama Research Institute. The authors would like to express their gratitude to B.H. Loo and J.M. Chang of the Universityo f Alabama in Huntsville for the Ra-man spectram easurements.
PY - 1993/3/1
Y1 - 1993/3/1
N2 - High quality diamond films with enhanced growth rates have been grown by a sequential deposition and etching process using the hot filament CVD method. A computer is used to control the switching between a cycle of high methane-content gas mixture diluted with hydrogen, which is used for high growth rate deposition, and the other cycle of hydrogen gas only, which is used for non-diamond etching, in order to achieve high growth rate diamond deposition without sacrificing diamond quality. According to SEM and Raman spectroscopy, high quality diamond films are obtained by use of a suitable ratio of the deposition time to the etching time and a short cycling period (10 s), which is necessary to remove undesirable non-diamond components in time to grow high quality diamond. The growth rate is several times higher than that of diamond film with a similar quality deposited by the continuous diamond deposition condition using the hot filament CVD method.
AB - High quality diamond films with enhanced growth rates have been grown by a sequential deposition and etching process using the hot filament CVD method. A computer is used to control the switching between a cycle of high methane-content gas mixture diluted with hydrogen, which is used for high growth rate deposition, and the other cycle of hydrogen gas only, which is used for non-diamond etching, in order to achieve high growth rate diamond deposition without sacrificing diamond quality. According to SEM and Raman spectroscopy, high quality diamond films are obtained by use of a suitable ratio of the deposition time to the etching time and a short cycling period (10 s), which is necessary to remove undesirable non-diamond components in time to grow high quality diamond. The growth rate is several times higher than that of diamond film with a similar quality deposited by the continuous diamond deposition condition using the hot filament CVD method.
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U2 - 10.1016/0022-0248(93)90358-4
DO - 10.1016/0022-0248(93)90358-4
M3 - Article
AN - SCOPUS:0027560742
VL - 128
SP - 413
EP - 417
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -