Abstract
High quality diamond films with enhanced growth rates have been grown by a sequential deposition and etching process using the hot filament CVD method. A computer is used to control the switching between a cycle of high methane-content gas mixture diluted with hydrogen, which is used for high growth rate deposition, and the other cycle of hydrogen gas only, which is used for non-diamond etching, in order to achieve high growth rate diamond deposition without sacrificing diamond quality. According to SEM and Raman spectroscopy, high quality diamond films are obtained by use of a suitable ratio of the deposition time to the etching time and a short cycling period (10 s), which is necessary to remove undesirable non-diamond components in time to grow high quality diamond. The growth rate is several times higher than that of diamond film with a similar quality deposited by the continuous diamond deposition condition using the hot filament CVD method.
Original language | English |
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Pages (from-to) | 413-417 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 128 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1993 Mar 1 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry