Growth of diamond by sequential deposition and etching process using hot filament CVD

J. Wei, Y. Tzeng

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

High quality diamond films with enhanced growth rates have been grown by a sequential deposition and etching process using the hot filament CVD method. A computer is used to control the switching between a cycle of high methane-content gas mixture diluted with hydrogen, which is used for high growth rate deposition, and the other cycle of hydrogen gas only, which is used for non-diamond etching, in order to achieve high growth rate diamond deposition without sacrificing diamond quality. According to SEM and Raman spectroscopy, high quality diamond films are obtained by use of a suitable ratio of the deposition time to the etching time and a short cycling period (10 s), which is necessary to remove undesirable non-diamond components in time to grow high quality diamond. The growth rate is several times higher than that of diamond film with a similar quality deposited by the continuous diamond deposition condition using the hot filament CVD method.

Original languageEnglish
Pages (from-to)413-417
Number of pages5
JournalJournal of Crystal Growth
Volume128
Issue number1-4
DOIs
Publication statusPublished - 1993 Mar 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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