TY - JOUR
T1 - Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD
AU - Anandan, Deepak
AU - Kakkerla, Ramesh Kumar
AU - Yu, Hung Wei
AU - Ko, Hua Lun
AU - Nagarajan, Venkatesan
AU - Singh, Sankalp Kumar
AU - Lee, Ching Ting
AU - Chang, Edward Yi
N1 - Funding Information:
This work was financially supported by the “ Center for Semiconductor Technology Research ” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the Ministry of Science and Technology, Taiwan , under Grant MOST- 107-3017-F-009-002 .
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/1/15
Y1 - 2019/1/15
N2 - In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1 1 1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameters lead to In-rich growth regime such that direct impingement of growth precursors on top of grown InAs NW (self-assembled) stems result in axial InSb HSs nucleation on InAs stems. The observed indium (In) droplet on InSb HS NW tip shows that InSb HS growth followed a self-catalyzed growth mechanism. InSb HS axial growth rate and morphology are controlled by growth temperature and growth time. A small change in the growth parameters significantly affects In particle accumulation, particle size and its chemical composition, and thus affects the InSb nucleation on the stem. Especially, it is found that (i) growth time of less 10 min yields vertical InSb HS NW on the top of the InAs stem, (ii) as the growth time increases above 10 min, the growth turned to be InSb wrapped InAs/InSb core-shell HS due to coaxial lateral growth. High resolution transmission electron microscopy (HRTEM) study reveals that all the InSb HSs exhibit pure zinc-blende (ZB) crystal structure. The results presented here provide significant guidelines for external catalyst-free InAs/InSb HS NW growth using MOCVD on silicon (Si) substrate for various optoelectronics and electronics applications.
AB - In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1 1 1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameters lead to In-rich growth regime such that direct impingement of growth precursors on top of grown InAs NW (self-assembled) stems result in axial InSb HSs nucleation on InAs stems. The observed indium (In) droplet on InSb HS NW tip shows that InSb HS growth followed a self-catalyzed growth mechanism. InSb HS axial growth rate and morphology are controlled by growth temperature and growth time. A small change in the growth parameters significantly affects In particle accumulation, particle size and its chemical composition, and thus affects the InSb nucleation on the stem. Especially, it is found that (i) growth time of less 10 min yields vertical InSb HS NW on the top of the InAs stem, (ii) as the growth time increases above 10 min, the growth turned to be InSb wrapped InAs/InSb core-shell HS due to coaxial lateral growth. High resolution transmission electron microscopy (HRTEM) study reveals that all the InSb HSs exhibit pure zinc-blende (ZB) crystal structure. The results presented here provide significant guidelines for external catalyst-free InAs/InSb HS NW growth using MOCVD on silicon (Si) substrate for various optoelectronics and electronics applications.
UR - http://www.scopus.com/inward/record.url?scp=85054706618&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85054706618&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2018.09.046
DO - 10.1016/j.jcrysgro.2018.09.046
M3 - Article
AN - SCOPUS:85054706618
VL - 506
SP - 45
EP - 54
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -