Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

Kuang Wei Liu; Sheng Joue Young; Shoou Jinn Chang; Tao Hung Hsueh; Hung Hung; Shi Xiang Chen; Yue Zhang Chen

doi:10.1016/j.jallcom.2011.08.025

Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

Kuang Wei Liu, Sheng Joue Young, Shoou Jinn Chang, Tao Hung Hsueh, Hung Hung, Shi Xiang Chen, Yue Zhang Chen

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8 Citations (Scopus)

Abstract

This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	511
Issue number	1
DOIs	https://doi.org/10.1016/j.jallcom.2011.08.025
Publication status	Published - 2012 Jan 15

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2011.08.025

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@article{15d8b249da1e4cdf936f1d545427cc07,

title = "Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer",

abstract = "This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.",

author = "Liu, {Kuang Wei} and Young, {Sheng Joue} and Chang, {Shoou Jinn} and Hsueh, {Tao Hung} and Hung Hung and Chen, {Shi Xiang} and Chen, {Yue Zhang}",

note = "Funding Information: This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan (D97-2700), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education. Funding Information: This work was supported by National Science Council of Taiwan under Contract numbers NSC 100-2221-E-150-057, NSC 99-2218-E-150-003 and NSC 99-2622-E-150-012-CC3. National Formosa University Research and Services Headquarters that provided the partial equipment for measurement is also acknowledged. ",

year = "2012",

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doi = "10.1016/j.jallcom.2011.08.025",

language = "English",

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journal = "Journal of Alloys and Compounds",

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T1 - Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

AU - Liu, Kuang Wei

AU - Young, Sheng Joue

AU - Chang, Shoou Jinn

AU - Hsueh, Tao Hung

AU - Hung, Hung

AU - Chen, Shi Xiang

AU - Chen, Yue Zhang

N1 - Funding Information: This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan (D97-2700), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education. Funding Information: This work was supported by National Science Council of Taiwan under Contract numbers NSC 100-2221-E-150-057, NSC 99-2218-E-150-003 and NSC 99-2622-E-150-012-CC3. National Formosa University Research and Services Headquarters that provided the partial equipment for measurement is also acknowledged.

PY - 2012/1/15

Y1 - 2012/1/15

N2 - This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

AB - This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

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Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

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