Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

Kuang Wei Liu, Sheng Joue Young, Shoou Jinn Chang, Tao Hung Hsueh, Hung Hung, Shi Xiang Chen, Yue Zhang Chen

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5 Citations (Scopus)

Abstract

This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalJournal of Alloys and Compounds
Volume511
Issue number1
DOIs
Publication statusPublished - 2012 Jan 15

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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