Growth of GaN film on 150 mm Si (111) using multilayer AlNAlGaN buffer by metal-organic vapor phase epitaxy method

Kung Liang Lin, Edward Yi Chang, Yu Lin Hsiao, Wei Ching Huang, Tingkai Li, Doug Tweet, Jer Shen Maa, Sheng Teng Hsu, Ching Ting Lee

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

High quality GaN film was successfully grown on 150 mm Si (111) substrate by metal-organic vapor phase epitaxy method using AlN multilayer combined with graded AlGaN layer as buffer. The buffer layer structure, film quality, and film thickness are critical for the growth of the crack-free GaN film on Si (111) substrate. Using multilayer AlN films grown at different temperatures combined with graded Al1-x Gax N film as the buffer, the tensile stress on the buffer layer was reduced and the compressive stress on the GaN film was increased. As a result, high quality 0.5 μm crack-free GaN epitaxial layer was successfully grown on 6 in. Si substrate.

Original languageEnglish
Article number222111
JournalApplied Physics Letters
Volume91
Issue number22
DOIs
Publication statusPublished - 2007 Dec 6

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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