Growth of Ge quantum dot superlattices for thermoelectric applications

J. L. Liu, A. Khitun, K. L. Wang, T. Borca-Tasciuc, W. L. Liu, G. Chen, D. P. Yu

Research output: Contribution to journalConference articlepeer-review

27 Citations (Scopus)

Abstract

We report on the thermal conductivity measurement of Ge quantum dot superlattices. The samples used were grown using molecular beam epitaxy. The typical dot sizes were determined by transmission electron microscopy measurements to be 75 nm in base and 7 nm in height. A differential 3ω method was employed to characterize the thermal conductivity of the samples. At room temperature, thermal conductivity was determined to be 6.2 and 30.5 W/mK in the cross-plane and in-plane direction, respectively. Temperature-dependent measurements showed that cross-plane thermal conductivity monotonously decreased while in-plane thermal conductivity showed a peak as the temperature decreased from 300 to 80 K. The results were well explained using a model based on the Boltzmann transport equation for cross-plane conductivity and based on the relaxation time approximation by including phonon scattering by quantum dots for in-plane thermal conductivity.

Original languageEnglish
Pages (from-to)1111-1115
Number of pages5
JournalJournal of Crystal Growth
Volume227-228
DOIs
Publication statusPublished - 2001 Jul
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 2000 Sep 112000 Sep 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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