Growth of HgBa2Ca2Cu3O8 thin films using stable Re0.1Ba2Ca2Cu3Ox precursor by pulsed laser deposition

W. N. Kang, R. L. Meng, C. W. Chu

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46 Citations (Scopus)


High quality c-axis oriented HgBa2Ca2Cu3O8 thin films have been fabricated with the stable Re-doped Ba2Ca2Cu3Ox precursor powder by pulsed laser deposition followed by postannealing without any special handling. As-grown films on (100) SrTiO3 exhibit a zero-resistance transition (Tc,zero) at ∼131 K with a narrow transition width ΔT∼1.5K after oxygen annealing at 340°C for 12 h. The critical current densities are observed 1.1×107A/cm2 at 10 K and 1.2×105A/cm2 at 120 K in zero field. The x-ray diffraction pattern indicates highly c-axis oriented thin films normal to the substrate plane containing a minor HgBa2CaCu2O6 phase. The scanning electron microscopy analysis shows that the surface morphology of the film is well connected platelike crystals but reveals Ba-Cu-Ox impurities are uniformly scattered across the film surface.

Original languageEnglish
Pages (from-to)381-383
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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