Growth of high-quality In0:4Ga0:6N film on Si substrate by metal organic chemical vapor deposition

Binh Tinh Tran; Edward Yi Chang; Kung Liang Lin; Yuen Yee Wong; Kartika Chandra Sahoo; Hsiao Yu Lin; Man Chi Huang; Hong Quan Nguyen; Ching Ting Lee; Hai Dang Trinh

doi:10.1143/APEX.4.115501

Growth of high-quality In_0:4Ga_0:6N film on Si substrate by metal organic chemical vapor deposition

Binh Tinh Tran, Edward Yi Chang, Kung Liang Lin, Yuen Yee Wong, Kartika Chandra Sahoo, Hsiao Yu Lin, Man Chi Huang, Hong Quan Nguyen, Ching Ting Lee, Hai Dang Trinh

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

High-quality In_0:4Ga_0:6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In_0:4Ga_0:6N growth. The GaN layer was 0.6 μm thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In_0:4Ga_0:6N film grown was 0.3 μm thick with a dislocation density of 6 × 10⁷ cm^-2 and X-ray (ω-2θ) FWHM better than 130 arcsec.

Original language	English
Article number	115501
Journal	Applied Physics Express
Volume	4
Issue number	11
DOIs	https://doi.org/10.1143/APEX.4.115501
Publication status	Published - 2011 Nov

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/APEX.4.115501

Cite this

@article{61569d30e08844539252d0368b392774,

title = "Growth of high-quality In0:4Ga0:6N film on Si substrate by metal organic chemical vapor deposition",

abstract = "High-quality In0:4Ga0:6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0:4Ga0:6N growth. The GaN layer was 0.6 μm thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0:4Ga0:6N film grown was 0.3 μm thick with a dislocation density of 6 × 107 cm-2 and X-ray (ω-2θ) FWHM better than 130 arcsec.",

author = "Tran, {Binh Tinh} and Chang, {Edward Yi} and Lin, {Kung Liang} and Wong, {Yuen Yee} and Sahoo, {Kartika Chandra} and Lin, {Hsiao Yu} and Huang, {Man Chi} and Nguyen, {Hong Quan} and Lee, {Ching Ting} and Trinh, {Hai Dang}",

year = "2011",

month = nov,

doi = "10.1143/APEX.4.115501",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Growth of high-quality In0:4Ga0:6N film on Si substrate by metal organic chemical vapor deposition

AU - Tran, Binh Tinh

AU - Chang, Edward Yi

AU - Lin, Kung Liang

AU - Wong, Yuen Yee

AU - Sahoo, Kartika Chandra

AU - Lin, Hsiao Yu

AU - Huang, Man Chi

AU - Nguyen, Hong Quan

AU - Lee, Ching Ting

AU - Trinh, Hai Dang

PY - 2011/11

Y1 - 2011/11

N2 - High-quality In0:4Ga0:6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0:4Ga0:6N growth. The GaN layer was 0.6 μm thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0:4Ga0:6N film grown was 0.3 μm thick with a dislocation density of 6 × 107 cm-2 and X-ray (ω-2θ) FWHM better than 130 arcsec.

AB - High-quality In0:4Ga0:6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0:4Ga0:6N growth. The GaN layer was 0.6 μm thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0:4Ga0:6N film grown was 0.3 μm thick with a dislocation density of 6 × 107 cm-2 and X-ray (ω-2θ) FWHM better than 130 arcsec.

UR - http://www.scopus.com/inward/record.url?scp=81055137642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81055137642&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.115501

DO - 10.1143/APEX.4.115501

M3 - Article

AN - SCOPUS:81055137642

SN - 1882-0778

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

M1 - 115501

ER -

Growth of high-quality In_0:4Ga_0:6N film on Si substrate by metal organic chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this