Growth of high-quality In0:4Ga0:6N film on Si substrate by metal organic chemical vapor deposition

Binh Tinh Tran, Edward Yi Chang, Kung Liang Lin, Yuen Yee Wong, Kartika Chandra Sahoo, Hsiao Yu Lin, Man Chi Huang, Hong Quan Nguyen, Ching Ting Lee, Hai Dang Trinh

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7 Citations (Scopus)


High-quality In0:4Ga0:6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0:4Ga0:6N growth. The GaN layer was 0.6 μm thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0:4Ga0:6N film grown was 0.3 μm thick with a dislocation density of 6 × 107 cm-2 and X-ray (ω-2θ) FWHM better than 130 arcsec.

Original languageEnglish
Article number115501
JournalApplied Physics Express
Issue number11
Publication statusPublished - 2011 Nov 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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