Growth of high-quality In_0:4Ga_0:6N film on Si substrate by metal organic chemical vapor deposition

High-quality In_0:4Ga_0:6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In_0:4Ga_0:6N growth. The GaN layer was 0.6 μm thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In_0:4Ga_0:6N film grown was 0.3 μm thick with a dislocation density of 6 × 10⁷ cm^-2 and X-ray (ω-2θ) FWHM better than 130 arcsec.