Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices

Jen Hao Song, Jow-Lay Huang, Tatsuya Omori, James C. Sung, Sean Wu, Horng Hwa Lu, Ding Fwu Lii

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer on diamond by doping AlN with boron. In this study, highly c-axis-oriented wurtzite boron-aluminum nitride (B, Al)N films were deposited on diamond by a co-sputtering technique. The resulting films exhibit a higher piezoelectric coefficient d 33 and higher Young's modulus than AlN films. Moreover, the greater rigidity of (B, Al)N film further boosts the resonance frequency of a diamond SAW device. Considering the SAW wavelength (λ = 2 μm), the calculated surface acoustic velocities (V S) of (B, Al)N on diamond is 8860 m/s that is higher than AlN on diamond (8720 m/s). We also find that the electromechanical coupling coefficient (K 2) of a SAW device based on (B, Al)N on diamond was the same (∼ 0.5%) as that of one based on AlN on diamond.

Original languageEnglish
Pages (from-to)2247-2250
Number of pages4
JournalThin Solid Films
Volume520
Issue number6
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Acoustic surface wave devices
surface acoustic wave devices
Diamond
Boron
Aluminum nitride
aluminum nitrides
boron nitrides
Diamonds
diamonds
aluminum nitride
Electromechanical coupling
Acoustic wave velocity
coupling coefficients
acceleration (physics)
acoustic velocity
rigidity
Rigidity
wurtzite
Surface waves
Sputtering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Song, Jen Hao ; Huang, Jow-Lay ; Omori, Tatsuya ; Sung, James C. ; Wu, Sean ; Lu, Horng Hwa ; Lii, Ding Fwu. / Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices. In: Thin Solid Films. 2012 ; Vol. 520, No. 6. pp. 2247-2250.
@article{083667eced3a4a028ba4b734a20fa4f6,
title = "Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices",
abstract = "Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer on diamond by doping AlN with boron. In this study, highly c-axis-oriented wurtzite boron-aluminum nitride (B, Al)N films were deposited on diamond by a co-sputtering technique. The resulting films exhibit a higher piezoelectric coefficient d 33 and higher Young's modulus than AlN films. Moreover, the greater rigidity of (B, Al)N film further boosts the resonance frequency of a diamond SAW device. Considering the SAW wavelength (λ = 2 μm), the calculated surface acoustic velocities (V S) of (B, Al)N on diamond is 8860 m/s that is higher than AlN on diamond (8720 m/s). We also find that the electromechanical coupling coefficient (K 2) of a SAW device based on (B, Al)N on diamond was the same (∼ 0.5{\%}) as that of one based on AlN on diamond.",
author = "Song, {Jen Hao} and Jow-Lay Huang and Tatsuya Omori and Sung, {James C.} and Sean Wu and Lu, {Horng Hwa} and Lii, {Ding Fwu}",
year = "2012",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2011.08.090",
language = "English",
volume = "520",
pages = "2247--2250",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "6",

}

Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices. / Song, Jen Hao; Huang, Jow-Lay; Omori, Tatsuya; Sung, James C.; Wu, Sean; Lu, Horng Hwa; Lii, Ding Fwu.

In: Thin Solid Films, Vol. 520, No. 6, 01.01.2012, p. 2247-2250.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices

AU - Song, Jen Hao

AU - Huang, Jow-Lay

AU - Omori, Tatsuya

AU - Sung, James C.

AU - Wu, Sean

AU - Lu, Horng Hwa

AU - Lii, Ding Fwu

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer on diamond by doping AlN with boron. In this study, highly c-axis-oriented wurtzite boron-aluminum nitride (B, Al)N films were deposited on diamond by a co-sputtering technique. The resulting films exhibit a higher piezoelectric coefficient d 33 and higher Young's modulus than AlN films. Moreover, the greater rigidity of (B, Al)N film further boosts the resonance frequency of a diamond SAW device. Considering the SAW wavelength (λ = 2 μm), the calculated surface acoustic velocities (V S) of (B, Al)N on diamond is 8860 m/s that is higher than AlN on diamond (8720 m/s). We also find that the electromechanical coupling coefficient (K 2) of a SAW device based on (B, Al)N on diamond was the same (∼ 0.5%) as that of one based on AlN on diamond.

AB - Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer on diamond by doping AlN with boron. In this study, highly c-axis-oriented wurtzite boron-aluminum nitride (B, Al)N films were deposited on diamond by a co-sputtering technique. The resulting films exhibit a higher piezoelectric coefficient d 33 and higher Young's modulus than AlN films. Moreover, the greater rigidity of (B, Al)N film further boosts the resonance frequency of a diamond SAW device. Considering the SAW wavelength (λ = 2 μm), the calculated surface acoustic velocities (V S) of (B, Al)N on diamond is 8860 m/s that is higher than AlN on diamond (8720 m/s). We also find that the electromechanical coupling coefficient (K 2) of a SAW device based on (B, Al)N on diamond was the same (∼ 0.5%) as that of one based on AlN on diamond.

UR - http://www.scopus.com/inward/record.url?scp=84855938149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855938149&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.08.090

DO - 10.1016/j.tsf.2011.08.090

M3 - Article

VL - 520

SP - 2247

EP - 2250

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 6

ER -