Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices

Jen Hao Song, Jow-Lay Huang, Tatsuya Omori, James C. Sung, Sean Wu, Horng Hwa Lu, Ding Fwu Lii

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer on diamond by doping AlN with boron. In this study, highly c-axis-oriented wurtzite boron-aluminum nitride (B, Al)N films were deposited on diamond by a co-sputtering technique. The resulting films exhibit a higher piezoelectric coefficient d 33 and higher Young's modulus than AlN films. Moreover, the greater rigidity of (B, Al)N film further boosts the resonance frequency of a diamond SAW device. Considering the SAW wavelength (λ = 2 μm), the calculated surface acoustic velocities (V S) of (B, Al)N on diamond is 8860 m/s that is higher than AlN on diamond (8720 m/s). We also find that the electromechanical coupling coefficient (K 2) of a SAW device based on (B, Al)N on diamond was the same (∼ 0.5%) as that of one based on AlN on diamond.

Original languageEnglish
Pages (from-to)2247-2250
Number of pages4
JournalThin Solid Films
Volume520
Issue number6
DOIs
Publication statusPublished - 2012 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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