Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices

Jen Hao Song, Jow Lay Huang, Tatsuya Omori, James C. Sung, Sean Wu, Horng Hwa Lu, Ding Fwu Lii

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer on diamond by doping AlN with boron. In this study, highly c-axis-oriented wurtzite boron-aluminum nitride (B, Al)N films were deposited on diamond by a co-sputtering technique. The resulting films exhibit a higher piezoelectric coefficient d 33 and higher Young's modulus than AlN films. Moreover, the greater rigidity of (B, Al)N film further boosts the resonance frequency of a diamond SAW device. Considering the SAW wavelength (λ = 2 μm), the calculated surface acoustic velocities (V S) of (B, Al)N on diamond is 8860 m/s that is higher than AlN on diamond (8720 m/s). We also find that the electromechanical coupling coefficient (K 2) of a SAW device based on (B, Al)N on diamond was the same (∼ 0.5%) as that of one based on AlN on diamond.

Original languageEnglish
Pages (from-to)2247-2250
Number of pages4
JournalThin Solid Films
Volume520
Issue number6
DOIs
Publication statusPublished - 2012 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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